1
Karl M J Lofgren, Robert D Norman, Gregory B Thelin, Anil Gupta: Wear leveling techniques for flash EEPROM systems. Sandisk Corporation, May 8, 2001: US06230233 (507 worldwide citation)

A mass storage system made of flash electrically erasable and programmable read only memory (“EEPROM”) cells organized into blocks, the blocks in turn being grouped into memory banks, is managed to even out the numbers of erase and rewrite cycles experienced by the memory banks in order to extend th ...


2
Karl M J Lofgren, Robert D Norman, Gregory B Thelin, Anil Gupta: Wear leveling techniques for flash EEPROM systems. Western Digital Corporation, SanDisk Corporation, Majestic Parsons Siebert & Hsue, June 27, 2000: US06081447 (339 worldwide citation)

A mass storage system made of flash electrically erasable and programmable read only memory ("EEPROM") cells organized into blocks, the blocks in turn being grouped into memory banks, is managed to even out the numbers of erase and rewrite cycles experienced by the memory banks in order to extend th ...


3
Karl M J Lofgren, Robert D Norman, Gregory B Thelin, Anil Gupta: Wear leveling techniques for flash EEPROM systems. SanDisk Corporation, Western Digital Corporation, Parsons Hsue & de Runtz, February 1, 2005: US06850443 (292 worldwide citation)

A mass storage system made of flash electrically erasable and programmable read only memory (“EEPROM”) cells organized into blocks, the blocks in turn being grouped into memory banks, is managed to even out the numbers of erase and rewrite cycles experienced by the memory banks in order to extend th ...


4
Karl M J Lofgren, Robert D Norman, Gregory B Thelin, Anil Gupta: Wear leveling techniques for flash EEPROM systems. SanDisk Corporation, Western Digital Corporation, Parsons Hsue & de Runtz, July 15, 2003: US06594183 (265 worldwide citation)

A mass storage system made of flash electrically erasable and programmable read only memory (“EEPROM”) cells organized into blocks, the blocks in turn being grouped into memory banks, is managed to even out the numbers of erase and rewrite cycles experienced by the memory banks in order to extend th ...


5
Karl M J Lofgren, Robert D Norman, Gregory B Thelin, Anil Gupta: Wear leveling techniques for flash EEPROM systems. SanDisk Corporation, Davis Wright Tremaine, April 1, 2008: US07353325 (34 worldwide citation)

A mass storage system made of flash electrically erasable and programmable read only memory (“EEPROM”) cells organized into blocks, the blocks in turn being grouped into memory banks, is managed to even out the numbers of erase and rewrite cycles experienced by the memory banks in order to extend th ...


6
Karl MJ Lofgren, Robert D Norman, Gregory B Thelin, Anil Gupta: Wear leveling techniques for flash EEPROM systems. SanDisk Corporation and Western Digital Corporation, Parsons Hsue & de Runtz, December 11, 2003: US20030227804-A1

A mass storage system made of flash electrically erasable and programmable read only memory (“EEPROM”) cells organized into blocks, the blocks in turn being grouped into memory banks, is managed to even out the numbers of erase and rewrite cycles experienced by the memory banks in order to extend th ...


7
Karl MJ Lofgren, Robert D Norman, Gregory B Thelin, Anil Gupta: Wear leveling techniques for flash eeprom systems. Davis Wright Tremaine Sandisk Corporation, July 3, 2008: US20080162798-A1

A mass storage system made of flash electrically erasable and programmable read only memory (“EEPROM”) cells organized into blocks, the blocks in turn being grouped into memory banks, is managed to even out the numbers of erase and rewrite cycles experienced by the memory banks in order to extend th ...


8
Karl MJ Lofgren, Robert D Norman, Gregory B Thelin, Anil Gupta: Wear leveling techniques for flash EEPROM systems. Parsons Hsue & de Runtz, May 26, 2005: US20050114589-A1

A mass storage system made of flash electrically erasable and programmable read only memory (“EEPROM”) cells organized into blocks, the blocks in turn being grouped into memory banks, is managed to even out the numbers of erase and rewrite cycles experienced by the memory banks in order to extend th ...