1
Robert P Mandal: Very low dielectric constant plasma-enhanced CVD films. Applied Materials, Moser Patterson & Sheridan, April 1, 2003: US06541367 (58 worldwide citation)

The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally labile groups with nitrous oxide, oxyg ...


2
Robert P Mandal: Very low dielectric constant plasma-enhanced CVD films. Applied Materials, Moser Patterson & Sheridan, July 22, 2003: US06596627 (39 worldwide citation)

The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally liable groups with nitrous oxide, oxyg ...


3
Robert P Mandal: Very low dielectric constant plasma-enhanced CVD films. Applied Materials, Patterson and Sheridan, April 17, 2007: US07205224 (10 worldwide citation)

The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally liable groups with nitrous oxide, oxyg ...


4
Robert P Mandal: Very low dielectric constant plasma-enhanced CVD films. Applied Materials, Moser Patterson & Sheridan, May 10, 2005: US06890639 (8 worldwide citation)

The present invention provides a method for depositing nano-porous low dielectric constant films by reacting a mixture comprising an oxidizable silicon component and an oxidizable component having thermally labile groups with an oxidizing gas in gas-phase plasma-enhanced reaction. The deposited sili ...


5
Robert P Mandal: Very low dielectric constant plasma-enhanced CVD films. Applied Materials, Patterson and Sheridan, August 22, 2006: US07094710 (7 worldwide citation)

The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally liable groups with nitrous oxide, oxyg ...


6
Robert P Mandal: Very low dielectric constant plasma-enhanced CVD films. Applied Materials, Patterson & Sheridan, July 15, 2008: US07399697 (4 worldwide citation)

The present invention provides a method for depositing nano-porous low dielectric constant films by reacting a mixture comprising an oxidizable silicon component and an oxidizable component having thermally labile groups with an oxidizing gas in gas-phase plasma-enhanced reaction. The deposited sili ...


7
Robert P Mandal: Very low dielectric constant plasma-enhanced CVD films. Applied Materials, Patterson & Sheridan, March 14, 2006: US07012030 (4 worldwide citation)

The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally liable groups with nitrous oxide, oxyg ...


8
Robert P Mandal: Very low dielectric constant plasma-enhanced CVD films. Appplied Materials, Patterson & Sheridan, October 13, 2009: US07601631 (2 worldwide citation)

The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally liable groups with nitrous oxide, oxyg ...


9
Robert P Mandal: Very low dielectric constant plasma-enhanced CVD films. Applied Materials, Patterson & Sheridan, December 15, 2009: US07633163 (1 worldwide citation)

The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally liable groups with nitrous oxide, oxyg ...


10
Robert P Mandal: Very low dielectric constant plasma-enhanced CVD films. Applied Materials, Patent Counsel Legal Affairs Department, November 25, 2004: US20040235291-A1 (1 worldwide citation)

The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally liable groups with nitrous oxide, oxyg ...