1
Dale M Brown: Vertical channel silicon carbide metal-oxide-semiconductor field effect transistor with self-aligned gate for microwave and power applications, and method of making. General Electric Company, Ann M Agosti, Marvin Snyder, May 7, 1996: US05514604 (43 worldwide citation)

A MOSFET includes a first SiC semiconductor contact layer, a SiC semiconductor channel layer supported by the first SiC contact layer, and a second SiC semiconductor contact layer supported by the channel layer. The second contact and channel layers are patterned to form a plurality of gate region g ...


2
Dale Marius Brown: Vertical channel silicon carbide metal-oxide-semiconductor field effect transistor with self-aligned gate for microwave and power applications, and method of making. General Electric Company, Ann M Agosti, Marvin Snyder, September 30, 1997: US05672889 (30 worldwide citation)

A MOSFET includes a first SiC semiconductor contact layer, a SiC semiconductor channel layer supported by the first SiC contact layer, and a second SiC semiconductor contact layer supported by the channel layer. The second contact and channel layers are patterned to form a plurality of gate region g ...


3
Alexander Lostetter: Apparatus having self healing liquid phase power connects and method thereof. Cree Fayetteville, Baker Hostetler, August 8, 2017: US09728868

The present invention is directed to a liquid and solid phase power connect for packaging of an electrical device using a using a phase changing metal. The phase changing metal transitions back and forth between a liquid phase and a solid phase while constantly maintaining connection to the electric ...