1
Roger A Booth Jr, Kangguo Cheng, Jack A Mandelman: Tunneling effect transistor with self-aligned gate. International Business Machines Corporation, Scully Scott Murphy & Presser P C, H Daniel Schnumann, April 20, 2010: US07700466 (94 worldwide citation)

In one embodiment, a mandrel and an outer dummy spacer may be employed to form a first conductivity type region. The mandrel is removed to form a recessed region wherein a second conductivity type region is formed. In another embodiment, a mandrel is removed from within shallow trench isolation to f ...


2
Roger A Booth JR, Kangguo Cheng, Jack A Mandelman: Tunneling effect transistor with self-aligned gate. International Business Machines Corporation, Scully Scott Murphy & Presser PC, January 29, 2009: US20090026491-A1

In one embodiment, a mandrel and an outer dummy spacer may be employed to form a first conductivity type region. The mandrel is removed to form a recessed region wherein a second conductivity type region is formed. In another embodiment, a mandrel is removed from within shallow trench isolation to f ...



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