1
TSV Testing Using Test Circuits and Grounding Means. TEXAS INSTRUMENTS INCORPORATED, September 26, 2013: US20130249590-A1

This disclosure describes a novel method and apparatus for testing TSVs within a semiconductor device. According to embodiments illustrated and described in the disclosure, a TSV may be tested by stimulating and measuring a response from a first end of a TSV while the second end of the TSV held at g ...


2
TSV TESTING USING TEST CIRCUITS AND GROUNDING MEANS. September 29, 2016: US20160282411-A1

This disclosure describes a novel method and apparatus for testing TSVs within a semiconductor device. According to embodiments illustrated and described in the disclosure, a TSV may be tested by stimulating and measuring a response from a first end of a TSV while the second end of the TSV held at g ...


3
TSV TESTING USING TEST CIRCUITS AND GROUNDING MEANS. April 19, 2018: US20180106863-A1

This disclosure describes a novel .method and apparatus for testing TSVs within a semiconductor device. According to embodiments illustrated and described in the disclosure, a TSV may be tested by stimulating and measuring a response from a first end of a TSV while the second end of the TSV held at ...


4
TSV TESTING USING TEST CIRCUITS AND GROUNDING MEANS. June 27, 2019: US20190195945-A1

This disclosure describes a novel method and apparatus for testing TSVs within a semiconductor device. According to embodiments illustrated and described in the disclosure, a TSV may be tested by stimulating and measuring a response from a first end of a TSV while the second end of the TSV held at g ...