1
Constantin Bulucea, Rebecca Rossen: Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry. Siliconix Incorporated, Skjerven Morrill MacPherson Franklin & Friel, December 10, 1991: US05072266 (236 worldwide citation)

Power MOSFET apparatus, and method for its production, that suppresses voltage breakdown near the gate, using a polygon-shaped trench in which the gate is positioned in order to suppress oxide dielectric breakdown, using a shaped deep body junction that partly lies below the trench bottom to force v ...


2
Constantin Bulucea, Rebecca Rossen: Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry. Siliconix incorporated, Skjerven Morrill MacPherson Franklin & Friel, March 29, 1994: US05298442 (45 worldwide citation)

Power MOSFET apparatus, and method for its production, that suppresses voltage breakdown near the gate, using a polygon-shaped trench in which the gate is positioned, using a shaped deep body junction that partly lies below the trench bottom, and using special procedures for growth of gate oxide at ...


3
Constantin Bulucea, Rebecca Rossen: Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry. Siliconix Incorporated, September 30, 2003: US06627950 (20 worldwide citation)

Power MOSFET apparatus, and method for its production, that suppresses voltage breakdown near the gate, using a polygon-shaped trench in which the gate is positioned, using a shaped deep body junction that partly lies below the trench bottom, and using special procedures for growth of gate oxide at ...