1
Daniel C Guterman, Stephen J Gross, Shahzad Khalid, Geoffrey S Gongwer: Tracking cells for a memory system. Sandisk Corporation, Vierra Magen Marcus & DeNiro, June 26, 2007: US07237074 (155 worldwide citation)

Tracking cells are used in a memory system to improve the read process. The tracking cells can provide an indication of the quality of the data and can be used as part of a data recovery operation if there is an error. The tracking cells provide a means to adjust the read parameters to optimum level ...


2
Daniel C Guterman, Stephen J Gross, Shahzad Khalid, Geoffrey S Gongwer: Tracking cells for a memory system. Sandisk Corporation, Vierra Magen Marcus & DeNiro, July 20, 2010: US07760555 (6 worldwide citation)

Tracking cells are used in a memory system to improve the read process. The tracking cells can provide an indication of the quality of the data and can be used as part of a data recovery operation if there is an error. The tracking cells provide a means to adjust the read parameters to optimum level ...


3
Daniel C Guterman, Stephen J Gross, Shazad Khalid, Geoffrey S Gongwer: Tracking cells for a memory system. SanDisk Corporation, Vierra Magen Marcus & DeNiro, March 29, 2011: US07916552 (1 worldwide citation)

Tracking cells are used in a memory system to improve the read process. The tracking cells can provide an indication of the quality of the data and can be used as part of a data recovery operation if there is an error. The tracking cells provide a means to adjust the read parameters to optimum level ...


4
Guterman Daniel C, Gross Stephen J, Khalid Shahzad, Gongwer Geoffrey S: Tracking cells for a memory system. Sandisk Corporation, Guterman Daniel C, Gross Stephen J, Khalid Shahzad, Gongwer Geoffrey S, MAGEN Burt, December 29, 2004: WO/2004/114313 (1 worldwide citation)

Tracking cells are used in a memory system to improve the read process. The tracking cells can provide an indication of the quality of the data and can be used as part of a data recovery operation if there is an error. The tracking cells 5 provide a means to adjust the read parameters to optimum lev ...


5
Guterman Daniel C, Gross Stephen J, Khalid Shahzad, Gongwer Geoffrey S: Tracking cells for a memory system. Sandisk Corporation, November 21, 2005: TWI244089 (1 worldwide citation)

Tracking cells are used in a memory system to improve the read process. The tracking cells can provide an indication of the quality of the data and can be used as part of a data recovery operation if there is an error. The tracking cells provide a means to adjust the read parameters to optimum level ...


6
Daniel C Guterman, Stephen J Gross, Shahzad Khalid, Geoffrey S Gongwer: Tracking cells for a memory system. SanDisk Technologies, Vierra Magen Marcus & DeNiro, December 6, 2011: US08072817

Tracking cells are used in a memory system to improve the read process. The tracking cells can provide an indication of the quality of the data and can be used as part of a data recovery operation if there is an error. The tracking cells provide a means to adjust the read parameters to optimum level ...


7
Nima Mokhlesi: Three dimensional non-volatile memory with shorting source line/bit line pairs. SANDISK TECHNOLOGIES, Vierra Magen Marcus, March 6, 2018: US09911488

A non-volatile storage system dedicates a subset of blocks to be used for shorting source lines to bit lines at periodic positions along the bit lines during certain memory operations.


8
Nima Mokhlesi, Ali Al Shamma: Three dimensional non-volatile memory with current sensing programming status. SANDISK TECHNOLOGIES, Vierra Magen Marcus, July 25, 2017: US09715924

A non-volatile memory system includes a plurality of non-volatile memory cells, one or more control circuits that perform programming of the memory cells, a power supply line that provides a supply used to program the memory cells, and a current measurement circuit. The current measurement circuit s ...


9
Huai Yuan Tseng, Deepanshu Dutta: Double lockout in non-volatile memory. SanDisk Technologies, Vierra Magen Marcus, January 23, 2018: US09875805

A double lockout programming technique is provided having a hidden delay between programming and verification. A temporary lockout stage and a permanent lockout stage are provided for double lockout programming. The temporary lockout stage precedes the permanent lockout stage and is used to initiall ...


10
Chun hung Lai, Cheng Kuan Yin, Shih Chung Lee, Deepanshu Dutta, Ken Oowada: Partial block erase for block programming in non-volatile memory. SanDisk Technologies, Vierra Magen Marcus, January 10, 2017: US09543023

A non-volatile memory system utilizes partial block erasing during program operations to mitigate the effects of programming pass voltage disturbances. A programming request is received that is associated with a group of word lines from a block, such as all or a portion of the word lines. The system ...