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Theodore O Meyer, John W Mosier II, Douglas A Pike Jr, Theodore G Hollinger, Dah W Tsang: Method of making topographic pattern delineated power MOSFET with profile tailored recessed source. Advanced Power Technology, Marger Johnson McCollom & Stolowitz, May 28, 1991: US05019522 (54 worldwide citation)

A dopant-opaque layer of polysilicon is deposited on gate oxide on the upper substrate surface to serve as a pattern definer during fabrication of the device. It provides control over successive P and N doping steps used to create the necessary operative junctions within a silicon substrate and the ...


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Theodore O Meyer, John W Mosier II, Douglas A Pike Jr, Theodore G Hollinger, Dah W Tsang: Topographic pattern delineated power MOSFET with profile tailored recessed source. Advanced Power Technology, Marger Johnson McCollom & Stolowitz, September 3, 1991: US05045903 (46 worldwide citation)

A dopant-opaque layer of polysilicon is deposited on gate oxide on the upper substrate surface to serve as a pattern definer during fabrication of the device. It provides control over successive P and N doping steps used to create the necessary operative junctions within a silicon substrate and the ...


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Meyer Theodore O, Mosier Ii John W, Pike Douglas A Jr, Tsang Dah Wen, Hollinger Theodore G: Topographic pattern delineated power mosfet with profile tailored recessed source.. Advanced Power Technology, November 23, 1989: EP0342952-A2 (8 worldwide citation)

A dopant-opaque layer of polysilicon (32) is deposited on gate oxide (26) on a silicon substrate (18, 20) to serve as a pattern definer. It controls successive P and N doping steps used to form operative DMOSFET regions within the substrate, a trench (63) in the silicon surface, and conductive struc ...


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Meyer Theodore O, Mosier John W Ii, Pike Douglas A Jr, Tsang Dah W, Hollinger Theodore G: Mosfet de puissance a configuration definie comportant une source profilee, Topographic pattern delineated power mosfet with profile tailored processed source. Advanced Power Technology, FETHERSTONHAUGH & CO, July 14, 1992: CA1305261

TOPOGRAPHIC PATTERN DELINEATED POWER MOSFET WITH PROFILE TAILORED RECESSED SOURCE ABSTRACT OF THE DISCLOSUREA dopant-opaque layer of polysilicon is depositedon gate oxide on the upper substrate surface to serve asa pattern definer during fabrication of the device. Itprovides control over successive ...


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Meyer Theodore O, Mosier John W Ii, Pike Douglas A Jr, Tsang Dah Wen, Hollinger Theodore G: Mosfet de puissance a source enfouie, Topographic pattern delineated power mosfet with profile tailored recessed source. Microsemi Corporation, FETHERSTONHAUGH & CO, January 25, 1994: CA1326567

TOPOGRAPHIC PATTERN DELINEATED POWER MOSFET WITH PROFILE TAILORED RECESSED SOURCE ABSTRACT OF THE DISCLOSURE A dopant-opaque layer of polysilicon is depositedon gate oxide on the upper substrate surface to serve asa pattern definer during fabrication of the device. Itprovides control over successive ...