1
Zhijun Chen, Seung Park, Mikhail Korolik, Anchuan Wang, Nitin K Ingle: Non-local plasma oxide etch. Applied Materials, Kilpatrick Townsend & Stockton, August 18, 2015: US09111877 (83 worldwide citation)

A method of etching exposed titanium oxide on heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flawed into a substrate processing region where the plasma effluents may combine with a nitro ...


2
Xikun Wang, Lin Xu, Anchuan Wang, Nitin K Ingle: Titanium oxide etch. Applied Materials, Kilpatrick Townsend & Stockton, March 15, 2016: US09287134 (54 worldwide citation)

Methods of selectively etching titanium oxide relative to silicon oxide, silicon nitride and/or other dielectrics are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and/or a chlorine-containing precursor. Plasma effluents from t ...


3
Zhijun Chen, Seung Park, Mikhail Korolik, Anchuan Wang, Nitin K Ingle: Non-local plasma oxide etch. Applied Materials, Kilpatrick Townsend & Stockton, May 31, 2016: US09355863 (39 worldwide citation)

A method of etching exposed titanium oxide on heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents may combine with a nitro ...


4
Belgacem Haba, Arkalgud R Sitaram: Ultrathin layer for forming a capacitive interface between joined integrated circuit components. Invensas Corporation, July 24, 2018: US10032751

Capacitive coupling of integrated circuit die components and other conductive areas is provided. Each component to be coupled has a surface that includes at least one conductive area, such as a metal pad or plate. An ultrathin layer of dielectric is formed on at least one surface to be coupled. When ...


5
NON-LOCAL PLASMA OXIDE ETCH. Applied Materials, June 19, 2014: US20140166617-A1

A method of etching exposed titanium oxide on heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flawed into a substrate processing region where the plasma effluents may combine with a nitro ...


6
TITANIUM OXIDE ETCH. Applied Materials, July 23, 2015: US20150206764-A1

Methods of selectively etching titanium oxide relative to silicon oxide, silicon nitride and/or other dielectrics are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and/or a chlorine-containing precursor. Plasma effluents from t ...


7
NON-LOCAL PLASMA OXIDE ETCH. December 10, 2015: US20150357201-A1

A method of etching exposed titanium oxide on heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents may combine with a nitro ...


8
Capacitive Coupling of Integrated Circuit Die Components. Invensas Corporation, March 30, 2017: US20170092620-A1

Capacitive coupling of integrated circuit die components and other conductive areas is provided. Each component to be coupled has a surface that includes at least one conductive area, such as a metal pad or plate. An ultrathin layer of dielectric is formed on at least one surface to be coupled. When ...


9
Ultrathin Layer for Forming a Capacitive Interface Between Joined Integrated Circuit Component. Invensas Corporation, December 20, 2018: US20180366446-A1

Capacitive coupling of integrated circuit die components and other conductive areas is provided. Each component to be coupled has a surface that includes at least one conductive area, such as a metal pad or plate. An ultrathin layer of dielectric is formed on at least one surface to be coupled. When ...


10
CAPACITIVE COUPLING IN A DIRECT-BONDED INTERFACE FOR MICROELECTRONIC DEVICES. Invensas Corporation, April 18, 2019: US20190115323-A1

Capacitive couplings in a direct-bonded interface for microelectronic devices are provided. In an implementation, a microelectronic device includes a first die and a second die direct-bonded together at a bonding interface, a conductive interconnect between the first die and the second die formed at ...