1
Fernando Gonzalez, Raymond A Turi, Graham R Wolstenholme, Charles L Ingalls: Three-dimensional container diode for use with multi-state material in a non-volatile memory cell. Micron Technology, Fletcher Yoder & Edwards, November 3, 1998: US05831276 (254 worldwide citation)

A vertically oriented diode for use in delivering current to a multi-state memory element in a memory cell. A vertical diode may be disposed in a diode container extending downwardly from a top of a silicon or oxide layer, and may be formed of a combination of silicon and/or metal layers disposed pr ...


2
Fernando Gonzalez, Raymond A Turi, Graham R Wolstenholme, Charles L Ingalls: Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell. Micron Technology, Fletcher Yoder & Van Someren, November 16, 1999: US05985698 (216 worldwide citation)

A vertically oriented diode for use in delivering current to a multi-state memory element in a memory cell. A vertical diode may be disposed in a diode container extending downwardly from a top of a silicon or oxide layer, and may be formed of a combination of silicon and/or metal layers disposed pr ...


3
Fernando Gonzalez, Raymond A Turi, Graham R Wolstenholme, Charles L Ingalls: Three-dimensional container diode for use with multi-state material in a non-volatile memory cell. Micron Technology, Fletcher Yoder & Van Someren, September 12, 2000: US06118135 (18 worldwide citation)

A vertically oriented diode for use in delivering current to a multi-state memory element in a memory cell. A vertical diode may be disposed in a diode container extending downwardly from a top of a silicon or oxide layer, and may be formed of a combination of silicon and/or metal layers disposed pr ...


4
Fernando Gonzalez, Raymond A Turi, Graham R Wolstenholme, Charles L Ingalls: Three-dimensional container diode for use with multi-state material in a non-volatile memory cell. Micron Technology, Fletcher Yoder & Van Someren, August 6, 2002: US06429449 (16 worldwide citation)

A vertically oriented diode for use in delivering current to a multi-state memory element in a memory cell. A vertical diode may be disposed in a diode container extending downwardly from a top of a silicon or oxide layer, and may be formed of a combination of silicon and/or metal layers disposed pr ...


5
Fernando Gonzalez, Raymond A Turi, Graham R Wolstenholme, Charles L Ingalls: Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell. Micron Technology, Fletcher Yoder, November 25, 2003: US06653195 (14 worldwide citation)

A vertically oriented diode for use in delivering current to a multi-state memory element in a memory cell. A vertical diode may be disposed in a diode container extending downwardly from a top of a silicon or oxide layer, and may be formed of a combination of silicon and/or metal layers disposed pr ...