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Hsiang Lan Lung, Shih Hung Chen: Thin film fuse phase change RAM and manufacturing method. Macronix International, Haynes Beffel & Wolfeld, January 22, 2008: US07321130 (117 worldwide citation)

A memory device comprising a first electrode having a top side, a second electrode having a top side and an insulating member between the first electrode and the second electrode. The insulating member has a thickness between the first and second electrodes near the top side of the first electrode a ...


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Hsiang Lan Lung, Shih Hung Chen: Thin film fuse phase change RAM and manufacturing method. Macronix International, Haynes Beffel & Wolfeld, August 25, 2009: US07579613 (23 worldwide citation)

A memory device comprising a first electrode having a top side, a second electrode having a top side and an insulating member between the first electrode and the second electrode. The insulating member has a thickness between the first and second electrodes near the top side of the first electrode a ...


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Hsiang Lan Lung, Shih Hung Chen: Thin film fuse phase change RAM and manufacturing method. Macronix International, Macronix, C O Haynes Beffell & Wolfeld, December 21, 2006: US20060284279-A1

A memory device comprising a first electrode having a top side, a second electrode having a top side and an insulating member between the first electrode and the second electrode. The insulating member has a thickness between the first and second electrodes near the top side of the first electrode a ...


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Hsiang Lan Lung, Shih Hung Chen: Thin film fuse phase change ram and manufacturing method. Macronix International, Macronix, C O Haynes Beffel & Wolfeld, May 8, 2008: US20080105862-A1

A memory device comprising a first electrode having a top side, a second electrode having a top side and an insulating member between the first electrode and the second electrode. The insulating member has a thickness between the first and second electrodes near the top side of the first electrode a ...


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Chen Shih H: Thin film fuse phase change ram and manufacturing method. Macronix Int, xia jing, December 20, 2006: CN200610073652

An integrated circuit with an embedded memory comprises a substrate and a plurality of conductor layers arranged for interconnecting components of the integrated circuit. An intermediate layer in the plurality of conductor layers includes a first electrode having a top surface, a second electrode ha ...


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Lung Hsian Lan, Chen Shih Hung: Thin film fuse phase change ram and manufacturing method. Macronix International, January 1, 2007: TW200701222

A memory device comprising a first electrode having a top side, a second electrode having a top side and an insulating member between the first electrode and the second electrode. The insulating member has a thickness between the first and second electrodes near the top side of the first electrode a ...


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