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David K Biegesen, Noble M Johnson, Dirk J Bartlelink, Marvin D Moyer: Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas. Xerox Corporation, Serge Abend, May 18, 1982: US04330363 (201 worldwide citation)

A method for laser induced conversion of large predefined areas of amorphous or polycrystalline semiconductor material, disposed nonepitaxially upon a substrate, into large single crystal areas, by controlling the lateral heat flow out of the melted regions of the areas for causing their recrystalli ...


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Biegelsen David K, Moyer Marvin D, Bartelink Dirk J, Johnson Noble M: Regulateur de niveau de temperature pour parfaire la cristallisation au laser de zones semiconductrices predefinies, Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas. Xerox Corporation, SIM & MCBURNEY, November 15, 1983: CA1157167

-1- ABSTRACT OF THE DISCLOSURE A method for laser induced conversion of large predefined areas ofamorphous or polycrystalline semiconductor material, disposed non-epitaxially upon a substrate, into large single crystal areas, bycontrolling the lateral heat flow out of the melted regions of theareas ...