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Colin S Bill, Wei Daisy Cai: Temperature compensation of thin film diode voltage threshold in memory sensing circuit. Spansion, Amin & Turocy, December 5, 2006: US07145824 (22 worldwide citation)

Systems and methodologies are provided for temperature compensation of thin film diode voltage levels in memory sensing circuits. The subject invention includes a temperature sensitive bias circuit and an array core with a temperature variable select device. The array core can consist of a thin film ...


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Bill Colin S, Cai Wei Daisy: Temperature compensation of thin film diode voltage threshold in memory sensing circuit. Spansion, Bill Colin S, Cai Wei Daisy, DRAKE Paul S, September 28, 2006: WO/2006/102391 (7 worldwide citation)

Systems and methodologies are provided for temperature compensation of thin film diode voltage levels in memory sensing circuits. The subject invention includes a temperature sensitive bias circuit (408) and an array core (500) with a temperature variable select device (430). The array core (500) ca ...


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Colin S Bill, Wei Daisy Cai: Temperature compensation of thin film diode voltage threshold in memory sensing circuit. Spansion, Amin Turocy & Calvin, September 28, 2006: US20060215439-A1

Systems and methodologies are provided for temperature compensation of thin film diode voltage levels in memory sensing circuits. The subject invention includes a temperature sensitive bias circuit and an array core with a temperature variable select device. The array core can consist of a thin film ...


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