1
Lars S Carlson: Technique for suppression of edge current in semiconductor devices. Digirad Corporation, Fish & Richardson P C, January 13, 2004: US06677182 (38 worldwide citation)

A passive mechanism suppresses injection, into any active guard regions interposed between the edge of a photodiode array chip and the outer photodiode pixels or into the outer pixels themselves, of minority carrier current generated in the physically disrupted region at the edge of the semiconducto ...


2
Lars S Carlson: Technique for suppression of edge current in semiconductor devices. Digirad Corporation, Fish & Richardson P C, May 15, 2007: US07217953 (25 worldwide citation)

A passive mechanism suppresses injection, into any active guard regions interposed between the edge of a photodiode array chip and the outer photodiode pixels or into the outer pixels themselves, of minority carrier current generated in the physically disrupted region at the edge of the semiconducto ...


3
Lars S Carlson: Technique for suppression of edge current in semiconductor devices. Diglrad Corporation, Fish & Richardson P C, September 28, 2004: US06798034 (1 worldwide citation)

A passive mechanism suppresses injection, into any active guard regions interposed between the edge of a photodiode array chip and the outer photodiode pixels or into the outer pixels themselves, of minority carrier current generated in the physically disrupted region at the edge of the semiconducto ...


4
Carlson Lars S: Technique for suppression of edge current in semiconductor devices. Digirad, February 19, 2003: EP1284014-A1

A passive mechanism suppresses injection, into any active guard regions interposed between the edge (170) of a photodiode array chip and the outer photodiode pixels or into the outer pixels themselves, of minority carrier (180) current generated in the physically disrupte region at the egde of the s ...


5
Lars S Carlson: Technique for suppression of edge current in semiconductor devices. James T Hagler, Fish & Richardson PC, October 25, 2001: US20010034105-A1

A passive mechanism suppresses injection, into any active guard regions interposed between the edge of a photodiode array chip and the outer photodiode pixels or into the outer pixels themselves, of minority carrier current generated in the physically disrupted region at the edge of the semiconducto ...


6
Lars S Carlson: Technique for suppression of edge current in semiconductor devices. Digirad Corporation a Delaware corporation, Fish & Richardson PC, December 12, 2002: US20020185654-A1

A passive mechanism suppresses injection, into any active guard regions interposed between the edge of a photodiode array chip and the outer photodiode pixels or into the outer pixels themselves, of minority carrier current generated in the physically disrupted region at the edge of the semiconducto ...


7
Lars S Carlson: Technique for suppression of edge current in semiconductor devices. Digirad Corporation a Delaware corporation, Fish & Richardson PC, August 11, 2005: US20050173774-A1

A passive mechanism suppresses injection, into any active guard regions interposed between the edge of a photodiode array chip and the outer photodiode pixels or into the outer pixels themselves, of minority carrier current generated in the physically disrupted region at the edge of the semiconducto ...


8
Carlson Lars S: Technique for suppression of edge current in semiconductor devices. Digirad Corporation, HAGLER James T, November 1, 2001: WO/2001/082360

A passive mechanism suppresses injection, into any active guard regions interposed between the edge (170) of a photodiode array chip and the outer photodiode pixels or into the outer pixels themselves, of minority carrier (180) current generated in the physically disrupte region at the egde of the s ...