1
Eugene Fitzgerald
Minjoo L Lee, Christopher W Leitz, Eugene A Fitzgerald: Structures with planar strained layers. AmberWave Systems Corporation, Goodwin Procter, November 28, 2006: US07141820 (7 worldwide citation)

A structure including a compressively strained semiconductor layer, the compressively strained layer having a strain greater than or equal to 0.25%. A tensilely strained semiconductor layer may be formed over the compressively strained layer. The compressively strained layer is substantially planar, ...


2
Eugene Fitzgerald
Minjoo L Lee, Christopher W Leitz, Eugene A Fitzgerald: Structures with planar strained layers. Massachusetts Institute of Technology, Goodwin Procter, March 29, 2007: US20070072354-A1

A structure and a method for forming the structure, the method including forming a compressively strained semiconductor layer, the compressively strained layer having a strain greater than or equal to 0.25%. A tensilely strained semiconductor layer is formed over the compressively strained layer. Th ...


3
Eugene Fitzgerald
Minjoo L Lee, Christopher W Leitz, Eugene A Fitzgerald: Structures with planar strained layers. Massachusetts Institute of Technology, Testa Hurwitz & Thibeault, August 26, 2004: US20040164318-A1

A structure and a method for forming the structure, the method including forming a compressively strained semiconductor layer, the compressively strained layer having a strain greater than or equal to 0.25%. A tensilely strained semiconductor layer is formed over the compressively strained layer. Th ...