1
Eugene Fitzgerald
Saurabh Gupta, Minjoo Larry Lee, Eugene A Fitzgerald: Strained tri-channel layer for semiconductor-based electronic devices. Massachusetts Institute of Technology, Wolf Greenfield & Sacks P C, September 7, 2010: US07791107 (8 worldwide citation)

A semiconductor-based structure includes a substrate layer, a compressively strained semiconductor layer adjacent to the substrate layer to provide a channel for a component, and a tensilely strained semiconductor layer disposed between the substrate layer and the compressively strained semiconducto ...


2
Eugene Fitzgerald
Saurabh Gupta, Minjoo Larry Lee, Eugene A Fitzgerald: Strained tri-channel layer for semiconductor-based electronic devices. Jamie H Rose, Wolf Greenfield & Sacks PC, December 22, 2005: US20050279992-A1

A semiconductor-based structure includes a substrate layer, a compressively strained semiconductor layer adjacent to the substrate layer to provide a channel for a component, and a tensilely strained semiconductor layer disposed between the substrate layer and the compressively strained semiconducto ...


3
Gupta Saurabh, Lee Minjoo Larry, Fitzgerald Eugene A: Strained tri-channel layer for semiconductor-based electronic devices. Massachusetts Institute of Technology, Gupta Saurabh, Lee Minjoo Larry, Fitzgerald Eugene A, HENRY Steven J, January 19, 2006: WO/2006/007394

A semiconductor-based structure includes a substrate layer, a compressively strained semiconductor layer adjacent to the substrate layer to provide a channel for a component, and a tensilely strained semiconductor layer disposed between the substrate layer and the compressively strained semiconducto ...