1
Eugene Fitzgerald
David M Isaacson, Eugene A Fitzgerald: Strained silicon-on-silicon by wafer bonding and layer transfer. Massachusetts Institute of Technology, Wolf Greenfield & Sacks P C, February 24, 2009: US07495266 (2 worldwide citation)

A semiconductor-based structure includes first and second layers bonded directly to each other at an interface. Parallel to the interface, the lattice spacing of the second layer is different than the lattice spacing of the first layer. The first and second layers are each formed of essentially the ...


2
Eugene Fitzgerald
David M Isaacson, Eugene A Fitzgerald: Strained silicon-on-silicon by wafer bonding and layer transfer. Jamie H Rose, Wolf Greenfield & Sacks PC, December 22, 2005: US20050280026-A1

A semiconductor-based structure includes first and second layers bonded directly to each other at an interface. Parallel to the interface, the lattice spacing of the second layer is different than the lattice spacing of the first layer. The first and second layers are each formed of essentially the ...


3
Isaacson David M, Fitzgerald Eugene A: Strained silicon-on-silicon by wafer bonding and layer transfer. Massachusetts Institute of Technology, Isaacson David M, Fitzgerald Eugene A, HENRY Steven J, January 19, 2006: WO/2006/007396

A semiconductor-based structure includes first and second layers bonded directly to each other at an interface. Parallel to the interface, the lattice spacing of the second layer is different than the lattice spacing of the first layer. The first and second layers are each formed of essentially the ...