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Eugene Fitzgerald
Eugene A Fitzgerald, Arthur J Pitera: Strained gettering layers for semiconductor processes. Massachusetts Institute of Technology, Wolf Greenfield & Sacks P C, April 10, 2007: US07202124 (43 worldwide citation)

A method and structure for forming semiconductor structures using tensilely strained gettering layers. The method includes forming a donor wafer comprising a tensilely strained gettering layer disposed over a substrate, and at least one material layer disposed over the tensilely strained gettering l ...


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Eugene Fitzgerald
Eugene A Fitzgerald, Arthur J Pitera: Strained gettering layers for semiconductor processes. Massachusetts Institute of Technology, Wolf Greenfield & Sacks PC, Federal Reserve Plaza, April 6, 2006: US20060073674-A1

A method and structure for forming semiconductor structures using tensilely strained gettering layers. The method includes forming a donor wafer comprising a tensilely strained gettering layer disposed over a substrate, and at least one material layer disposed over the tensilely strained gettering l ...


3
Pitera Arthur J, Fitzgerald Eugene A: Strained gettering layers for semiconductor processes. Massachusetts Institute of Technology, Pitera Arthur J, Fitzgerald Eugene A, HENRY Steven J, April 13, 2006: WO/2006/039684

A method and structure for forming semiconductor structures using tensilely strained gettering layers. The method includes forming a donor wafer comprising a tensilely strained gettering layer disposed over a substrate, and at least one material layer disposed over the tensilely strained gettering l ...