1
Stephen W Bedell, Kangguo Cheng, Bruce B Doris, Ali Khakifirooz, Devendra K Sadana, Ghavam G Shahidi: Strained CMOS device, circuit and method of fabrication. International Business Machines Corporation, Tutunjian & Bitetto P C, Louis J Percello Esq, May 1, 2012: US08169025 (27 worldwide citation)

A semiconductor device and fabrication method include a strained semiconductor layer having a strain in one axis. A long fin and a short fin are formed in the semiconductor layer such that the long fin has a strained length along the one axis. An n-type transistor is formed on the long fin, and a p- ...


2
Stephen W Bedell, Kangguo Cheng, Bruce B Doris, Ali Khakifirooz, Devendra K Sadana, Ghavam G Shahidi: Strained cmos device, circuit and method of fabrication. International Business Machines Corporation, July 21, 2011: US20110175166-A1

A semiconductor device and fabrication method include a strained semiconductor layer having a strain in one axis. A long fin and a short fin are formed in the semiconductor layer such that the long fin has a strained length along the one axis. An n-type transistor is formed on the long fin, and a p- ...



Click the thumbnails below to visualize the patent trend.