1
Ravi Laxman
Tianniu Chen, Chongying Xu, Thomas H Baum, Ravi K Laxman, Alexander S Borovik: Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films. Advanced Technology Materials, Steven J Hultquist, Intellectual Property Technology Law, Maggie Chappuis, September 9, 2008: US07423166 (3 worldwide citation)

A siloxane dielectric precursor for use in a chemical vapor deposition (CVD) process, which has been dosed with a stabilizing agent(s) selected from free-radical inhibitors, end-capping agents and mixtures thereof. The stabilized siloxane dielectric precursor reduces the occurrence of premature depo ...


2
Ravi Laxman
Tianniu Chen, Chongying Xu, Thomas H Baum, Ravi K Laxman, Alexander S Borovik: Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films. Atmi, February 26, 2004: US20040039219-A1 (2 worldwide citation)

A siloxane dielectric precursor for use in a chemical vapor deposition (CVD) process, which has been dosed with a stabilizing agent(s) selected from free-radical inhibitors, end-capping agents and mixtures thereof. The stabilized siloxane dielectric precursor reduces the occurrence of premature depo ...



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