1
Jeffrey W Lutze, Jian Chen, Yan Li, Masaaki Higashitani: Source side self boosting technique for non-volatile memory. SanDisk Corporation, Vierra Magen Marcus Harmon & DeNiro, February 22, 2005: US06859397 (258 worldwide citation)

A non-volatile semiconductor memory system (or other type of memory system) is programmed in a manner that avoids program disturb. In one embodiment that includes a flash memory system using a NAND architecture, program disturb is avoided by increasing the channel potential of the source side of the ...


2
Jeffrey W Lutze, Jian Chen, Yan Li, Masaaki Higashitani: Source side self boosting technique for non-volatile memory. Sandisk Corporation, Vierra Magen Marcus Harmon & DeNiro, December 13, 2005: US06975537 (45 worldwide citation)

A non-volatile semiconductor memory system (or other type of memory system) is programmed in a manner that avoids program disturb. In one embodiment that includes a flash memory system using a NAND architecture, program disturb is avoided by increasing the channel potential of the source side of the ...


3
Anubhav Khandelwal, Dana Lee, Henry Chin, LanLan Gu: Methods and systems that selectively inhibit and enable programming of non-volatile storage elements. SanDisk Technologies, Vierra Magen Marcus, April 11, 2017: US09620238 (1 worldwide citation)

Non-volatile storage systems, and methods for programming non-volatile storage elements of non-volatile storage systems, are described herein. A method for programming a non-volatile storage element, wherein a loop number is incremented with each program-verify iteration includes performing a plural ...


4
Nima Mokhlesi: Dynamic adjustment of read voltage levels based on memory cell threshold voltage distribution. SANDISK TECHNOLOGIES, Vierra Magen Marcus, February 14, 2017: US09570184

A system and methods to find the threshold voltage distribution across a set of nonvolatile memory cells, such that embodiments may incorporate this distribution information into calculations that may change the read compare voltages used to read the memory cells, while ensuring adequate separation ...


5
Nima Mokhlesi: Dynamic adjustment of read voltage levels based on memory cell threshold voltage distribution. SANDISK TECHNOLOGIES, Vierra Magen Marcus, February 14, 2017: US09570185

A system and methods to find the threshold voltage distribution across a set of nonvolatile memory cells, such that embodiments may incorporate this distribution information into calculations that may change the read compare voltages used to read the memory cells, while ensuring adequate separation ...