1
Satyen Mukherjee, Thomas Chang: Single transistor electrically programmable memory device and method. Exel Microelectronics, Limbach Limbach & Sutton, October 6, 1987: US04698787 (266 worldwide citation)

An electrically erasable programmable memory device which is programmable in the manner of an EPROM and erasable in the manner of an EEPROM. A dielectric layer between the control gate and the floating gate is provided having a high dielectric constant. A thin, uniform gate dielectric layer is provi ...


2
Satyen Mukherjee, Thomas Chang: Single transistor electrically programmable memory device and method. Exel Microelectronics, Limbach Limbach & Sutton, September 19, 1989: US04868619 (65 worldwide citation)

An electrically erasable programmable memory device which is programmable in the manner of an EPROM and erasable in the manner of an EEPROM. A dielectric layer between the control gate and the floating gate is provided having a high dielectric constant. A thin, uniform gate dielectric layer is provi ...


3
Mukherjee Satyen, Chang Thomas: Memoire a transistor unique programmable electriquement, Single transistor electrically programmable memory device and method. Exel Microelectronics, MACRAE & CO, May 17, 1988: CA1236919

Abstractof the Disclosure Single Transistor Electrically Programmable Memory Device And Method An electrically erasable programmable memory devicewhich is programmable in the manner of an EPROM anderasable in the manner of an EEPROM. A dielectriclayer between the control gate and the floating gate i ...