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Alfred C Ipri: Silicon resistive device for integrated circuits. RCA, H Christoffersen, R P Williams, Donald S Cohen, February 7, 1978: US04072974 (32 worldwide citation)

A resistive device for use as a current feedback loop in an integrated CMOS shift register circuit is made of an island of polycrystalline silicon with a sheet resistivity of from 10.sup.6 to 10.sup.8 ohms per square. The polycrystalline silicon island has two contacts thereon fashioned in the manne ...


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Ipri Alfred C: Dispositif resistif au silicium polycristallin pour circuits integres et mode de fabrication, Polycrystalline silicon resistive device for integrated circuits and method for making same. Rca Corporation, October 10, 1978: CA1040321

POLYCRYSTALLINE SILICON RESISTIVE DEVICE FORINTEGRATED CIRCUITS AND METHOD FOR MAKING SAME Abstract of the DisclosureA resistive device for use as a current feedbackloop in an integrated CMOS shift register circuit is madeof an island of polycrystalline silicon with a sheetresistivity of from 106 to ...


3
Polycrystalline silicon resistive device for integrated circuits and method for making same. RCA, March 22, 1978: GB1505105-A

1505105 Integrated circuits RCA CORPORATION 22 May 1975 [23 July 1974] 22307/75 Heading H1K An I.C. comprises a monocrystalline insulating substrate carrying a plurality of discrete semiconductor islands each containing a circuit element, one of the islands being of polycrystalline material and havi ...