1
Bantval J Baliga: Silicon carbide power MOSFET with floating field ring and floating field plate. North Carolina State University at Raleigh, Bell Seltzer Park & Gibson, August 3, 1993: US05233215 (210 worldwide citation)

A silicon carbide power MOSFET device includes a first silicon carbide layer, epitaxially formed on the silicon carbide substrate of opposite conductivity type. A second silicon carbide layer of the same conductivity type as the substrate is formed on the first silicon carbide layer. A power field e ...


2
Baliga Bantval Jayant: Silicon carbide power mosfet with floating field ring and floating field plate. North Carolina State University, Baliga Bantval Jayant, BIGEL Mitchell S, December 23, 1993: WO/1993/026047

A silicon carbide power MOSFET device includes a first silicon carbide layer, epitaxially formed on the silicon carbide substrate of opposite conductivity type. A second silicon carbide layer of the same conductivity type as the substrate is formed on the first silicon carbide layer. A power field e ...


3
Baliga Bantval Jayant: Silicon carbide power mosfet with floating field ring and floating field plate.. Univ North Carolina, March 29, 1995: EP0645052-A1

A silicon carbide power MOSFET device includes a first silicon carbide layer, epitaxially formed on the silicon carbide substrate of opposite conductivity type. A second silicon carbide layer of the same conductivity type as the substrate is formed on the first silicon carbide layer. A power field e ...