1
Eb Eshun
Shashank S Ekbote, Kwan Yong Lim, Ebenezer Eshun, Youn Sung Choi: Silicide formation due to improved SiGe faceting. TEXAS INSTRUMENTS INCORPORATED, Jacqueline J Garner, Frank D Cimino, July 28, 2015: US09093298 (5 worldwide citation)

An integrated circuit includes a PMOS gate structure and a gate structure on adjacent field oxide. An epitaxy hard mask is formed over the gate structure on the field oxide so that the epitaxy hard mask overlaps the semiconductor material in PMOS source/drain region. SiGe semiconductor material is e ...


2
Eb Eshun
Shashank S Ekbote, Kwan Yong Lim, Ebenezer Eshun, Youn Sung Choi: Silicide formation due to improved SiGe faceting. TEXAS INSTRUMENTS INCORPORATED, Jacqueline J Garner, Frank D Cimino, December 1, 2015: US09202883 (1 worldwide citation)

An integrated circuit includes a PMOS gate structure and a gate structure on adjacent field oxide. An epitaxy hard mask is formed over the gate structure on the field oxide so that the epitaxy hard mask overlaps the semiconductor material in PMOS source/drain region. SiGe semiconductor material is e ...


3
Eb Eshun
Shashank S Ekbote, Kwan Yong Lim, Ebenezer Eshun, Youn Sung Choi: Silicide formation due to improved SiGe faceting. TEXAS INSTRUMENTS INCORPORATED, Jacqueline J Garner, Frank D Cimino, August 2, 2016: US09406769

An integrated circuit includes a PMOS gate structure and a gate structure on adjacent field oxide. An epitaxy hard mask is formed over the gate structure on the field oxide so that the epitaxy hard mask overlaps the semiconductor material in PMOS source/drain region. SiGe semiconductor material is e ...


4
SILICIDE FORMATION DUE TO IMPROVED SIGE FACETING. October 8, 2015: US20150287801-A1

An integrated circuit includes a PMOS gate structure and a gate structure on adjacent field oxide. An epitaxy hard mask is formed over the gate structure on the field oxide so that the epitaxy hard mask overlaps the semiconductor material in PMOS source/drain region. SiGe semiconductor material is e ...


5
SILICIDE FORMATION DUE TO IMPROVED SiGe FACETING. Texas Instruments Incorporated, February 26, 2015: US20150054084-A1

An integrated circuit includes a PMOS gate structure and a gate structure on adjacent field oxide. An epitaxy hard mask is formed over the gate structure on the field oxide so that the epitaxy hard mask overlaps the semiconductor material in PMOS source/drain region. SiGe semiconductor material is e ...


6
SILICIDE FORMATION DUE TO IMPROVED SiGe FACETING. January 28, 2016: US20160027888-A1

An integrated circuit includes a PMOS gate structure and a gate structure on adjacent field oxide. An epitaxy hard mask is formed over the gate structure on the field oxide so that the epitaxy hard mask overlaps the semiconductor material in PMOS source/drain region. SiGe semiconductor material is e ...