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Shoichi Yamauchi, Hisayoshi Ohshima, Masaki Matsui, Kunihiro Onoda, Tadao Ooka, Akitoshi Yamanaka, Toshifumi Izumi: Semiconductor substrate and method of manufacturing the same. Denso Corporation, Harness Dickey & Pierce, March 18, 2003: US06534380 (207 worldwide citation)

Before a semiconductor substrate and a base substrate is directly bonded to one another, in a protective film removing step, a contamination protective film formed on the semiconductor substrate to protect it from contamination during an ion implanting step is removed. Consequently, even when flatne ...


2
Nobuhiko Sato, Takao Yonehara, Kiyofumi Sakaguchi: Semiconductor substrate and method of manufacturing the same. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, November 7, 2000: US06143628 (93 worldwide citation)

A manufacturing method excellent in controllability, productivity and economics of a high-quality SOI wafer and a wafer manufactured by that method are provided. After wafer bonding, separation is made on an interface of a high porosity layer in a porous region including a low porosity layer and the ...


3
Yutaka Akino, Tadashi Atoji: Semiconductor substrate and method of manufacturing the same. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, July 9, 2002: US06417108 (87 worldwide citation)

A method of manufacturing a semiconductor substrate can effectively prevent a chipping phenomenon and the production of debris from occurring in part of the insulation layer and the semiconductor by removing a outer peripheral portion of the semiconductor substrate so as to make the outer peripheral ...


4
Okagawa Hiroaki, Tadatomo Kazuyuki, Ouchi Yoichiro, Tsunekawa Takashi: Semiconductor substrate and method of manufacturing the same. Mitsubishi Cable, June 7, 2002: JP2002-164296 (33 worldwide citation)

PROBLEM TO BE SOLVED: To eliminate various problems which result from the use of a mask layer, and to simplify a manufacturing process.SOLUTION: As shown in Fig. (a), a substrate 1 having an uneven growth face is prepared. When conducting a vapor phase growth using this substrate, the uneven shape o ...


5
Satoru Muramatsu: Semiconductor substrate and method of manufacturing the same. NEC Corporation, J Warren Whitesel, Michael Best & Friedrich, November 13, 2001: US06315826 (29 worldwide citation)

Disclosed are a structure of a semiconductor substrate and a method of manufacturing the semiconductor substrate preventing a reduction of gettering capability due to a high-temperature heat treatment. In a semiconductor substrate containing a highly concentrated impurity having a polysilicon layer ...


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Kawano Kenji: Gallium nitride compound semiconductor substrate and method of manufacturing the same. Nichia Chem, January 17, 2003: JP2003-017420 (8 worldwide citation)

PROBLEM TO BE SOLVED: To provide a gallium nitride chemical semiconductor substrate which requires no device process, such as a lateral growth when growing a gallium nitride chemical semiconductor layer thereon, and which has a uniform low defect region.SOLUTION: A method of manufacturing the galliu ...


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Yasuyoshi Mishima: Semiconductor device and method of manufacturing the same, and semiconductor substrate and method of manufacturing the same. Fujitsu Semiconductor, Fujitsu Patent Center, March 22, 2011: US07910415 (6 worldwide citation)

A method of manufacturing a semiconductor device including a substrate; an insulating film formed thereon; a first semiconductor layer where strain is induced in the directions parallel to the surface of the substrate, the first semiconductor layer being on the insulating film; a source region and a ...


10
Sato Nobuhiko, Yonehara Takao, Sakaguchi Kiyofumi: Semiconductor substrate and method of manufacturing the same. Canon, September 30, 1998: EP0867922-A2 (4 worldwide citation)

To provide a manufacturing method excellent in controllability, productivity and economics of a high-quality SOI wafer, and a wafer manufactured by that method, in the wafer manufactured by bonding, after bonding, separation is made on an interface of a high porosity layer in a porous region includi ...



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