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Eb Eshun
Coolbaugh Douglas D, Eshun Ebenezer E, Rassel Robert M, Slinkman James A, Zierak Michael J: Semiconductor structure and its manufacturing method. Ibm, taofeng bei, May 7, 2008: CN200610136640

The present invention provides a method for fabricating high gain FETs which substantially reduces or eliminates unwanted variation in device characteristics caused by using a prior art shadow masking process is provided. The inventive method employs a blocking mask that at least partially extends o ...


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Sawaki Nobuhiko, Honda Yoshio, Hikosaka Toshiteru, Tanigawa Tomoyuki: Nitride semiconductor structure and its manufacturing method. Univ Nagoya, December 18, 2008: JP2008-305977 (4 worldwide citation)

PROBLEM TO BE SOLVED: To selectively grow a semiconductor a semipolar nitride semiconductor advantageous for reducing occurrence of a piezoelectric field on a characteristic facet face without using masking technology at the time of selectively growing the semiconductor on a work base and to improve ...


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Kwon Yong Chai, Ri Toko, Lee Kang Wook, Han Seong Il, Ma Keum Hee: Semiconductor structure, and its manufacturing method. Samsung Electronics, December 6, 2007: JP2007-318143 (4 worldwide citation)

PROBLEM TO BE SOLVED: To provide a semiconductor structure comprising a semiconductor unit which has a front surface in which a projection part is formed and a rear surface in which a concave part is formed, and to provide its manufacturing method.SOLUTION: The semiconductor structure of the present ...


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Christopher L Chua, Philip D Floyd, Paoli Thomas L, Deikai San: Semiconductor structure and its manufacturing method. Xerox, September 14, 2001: JP2001-251017 (1 worldwide citation)

PROBLEM TO BE SOLVED: To provide a semiconductor structure which oxidizes a buried layer in a plane lateral direction in various applications of a semiconductor; and its manufacturing method.SOLUTION: Instead of forming a mesa which exposes a side wall of a layer to be oxidized, a buried layer 120 t ...


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Huilong Zhu, Haizhou Yin, Zhijiong Luo: Semiconductor structure and method for manufacturing the same. Chen Yoshi Mura, June 27, 2017: US09691899

A semiconductor structure is provided, comprising a substrate (130), a support structure (131), a base region (100), a gate stack, a spacer (240), and a source/drain region, wherein the gate stack is located above the base region (100), and the base region (100) is supported above the substrate (130 ...


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Tien hao Huang, Shang Yi Wu, Yi chun Wu: Semiconductor construction, semiconductor unit, and manufacturing method thereof. Unistars, Alan D Kamrath, Kamrath IP Lawfirm P A, December 8, 2015: US09209371

A semiconductor structure and its manufacturing method including multiple steps are provided. First, a patterned circuit board having a substrate and a patterned circuit layer is provided. The substrate includes a first surface, a second surface, at least one connecting channel, and at least one con ...


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Yan Shiyi: Two-dimensional display semiconductor structure and producing method thereof. Youda Photoelectric, chenchen, August 22, 2007: CN200710088723

This invention relates to a semiconductor structure and its manufacturing method for a plane display including a base plate with an active element region and a capacitance region, a patternized polysilicon layer matched on the active element region and the capacitance region of said base plate inclu ...


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Semiconductor structure and its manufacturing method. Ibm, lixiao shu weixiao gang, March 7, 2007: CN200610090871

An anti-fuse structure that included a buried electrically conductive, e.g., metallic layer as an anti-fuse material as well as a method of forming such an anti-fuse structure are provided. According to the present invention, the inventive anti-fuse structure comprises regions of leaky dielectric be ...


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Huang Guiwu, Liu Esen, Peng Baoqing: Semiconductor structure and its producing method. Taiwan Integrated Circuit Manufacturing, chen gong, September 29, 2004: CN03108821

A semiconductor structure and its manufacturing method is to utilize the ways such as selective reaction, plasma surface treatment or ion implantation to passivate surface of an insulation region of a conductor interval to prevent the atoms of the conductor interval from diffusing into the insulatio ...


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Wen Wen Ying: Rom semiconductor structure and its manufacturing method. Winbond Electronics, July 1, 2000: TW396548

The conventional ROM semiconductor production process takes the ion implantation to form the needed program code. The code implantation, which is confined by the implantation energy and threshold voltage control, has to be implemented before the inner layer of dielectric layer is formed, which will ...