1
Yuniarto Widjaja: Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating. Zeno Semiconductor, Alan W Cannon, August 14, 2012: US08243499 (84 worldwide citation)

Semiconductor memory is provided wherein a memory cell includes a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell. The cell further includes a nonvolatile memory comprising a resistance change element configured to store da ...


2
Yuniarto Widjaja: Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating. Zeno Semiconductor, Alan W Cannon, Law Office of Alan W Cannon, July 21, 2015: US09087580 (47 worldwide citation)

Semiconductor memory is provided wherein a memory cell includes a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell. The cell further includes a nonvolatile memory comprising a resistance change element configured to store da ...


3
Yuniarto Widjaja: Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating. Zeno Semiconductor, Alan W Cannon, November 8, 2016: US09490012 (32 worldwide citation)

Semiconductor memory is provided wherein a memory cell includes a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell. The cell further includes a nonvolatile memory comprising a resistance change element configured to store da ...


4
Yuniarto Widjaja: Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating. Zeno Semiconductor, Alan W Cannon, April 17, 2012: US08159868 (15 worldwide citation)

Semiconductor memory is provided wherein a memory cell includes a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell. The cell further includes a nonvolatile memory comprising a resistance change element configured to store da ...


5
Yuniarto Widjaja: Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating. Zeno Semiconductor, Law Office of Alan W Cannon, November 7, 2017: US09812203 (14 worldwide citation)

Semiconductor memory is provided wherein a memory cell includes a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell. The cell further includes a nonvolatile memory comprising a resistance change element configured to store da ...


6
Yuniarto Widjaja: Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating. Zeno Semiconductor, Alan W Cannon, July 24, 2018: US10032514 (2 worldwide citation)

Semiconductor memory is provided wherein a memory cell includes a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell. The cell further includes a nonvolatile memory comprising a resistance change element configured to store da ...


7
Yuniarto Widjaja: Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating. September 22, 2011: US20110228591-A1

Semiconductor memory is provided wherein a memory cell includes a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell. The cell further includes a nonvolatile memory comprising a resistance change element configured to store da ...


8
Yuniarto Widjaja: Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating. Law Office Of Alan W Cannon, February 25, 2010: US20100046287-A1

Semiconductor memory is provided wherein a memory cell includes a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell. The cell further includes a nonvolatile memory comprising a resistance change element configured to store da ...


9
Yuniarto Widjaja: Semiconductor Memory Having Both Volatile and Non-Volatile Functionality Including Resistance Change Material and Method of Operating. May 3, 2012: US20120106234-A1

Semiconductor memory is provided wherein a memory cell includes a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell. The cell further includes a nonvolatile memory comprising a resistance change element configured to store da ...


10
Semiconductor Memory Having Both Volatile and Non-Volatile Functionality Including Resistance Change Material and Method of Operating. October 29, 2015: US20150310917-A1

Semiconductor memory is provided wherein a memory cell includes a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell. The cell further includes a nonvolatile memory comprising a resistance change element configured to store da ...