1
Jung hyun Lee, Young soo Park, Won tae Lee: Semiconductor memory device and method of fabricating the same. Samsung Electronics, Lee & Morse P C, January 16, 2007: US07164147 (127 worldwide citation)

Provided are a semiconductor memory device and a method of fabricating the same. The semiconductor memory device includes a heating portion interposed between a transistor and a data storing portion, and a metal interconnection layer connected to the data storing portion. The data storing portion in ...


2
Naho Nishioka, Natsuo Ajika, Hiroshi Onoda: Nonvolatile semiconductor memory device and method of fabricating the same. Mitsubishi Denki Kabushiki Kaisha, McDermott Will & Emery, November 30, 1999: US05994733 (36 worldwide citation)

Each nonvolatile transistor comprises a floating gate electrode, an ONO film and a control gate electrode. An upper surface of a silicon oxide film is positioned at a height between upper and lower surfaces of the floating gate electrode. The control gate electrode continuously extends on the floati ...


3
Genshu Fuse, Toshio Yamada, Shinji Odanaka, Masaki Fukumoto: Semiconductor memory device and method of fabricating the same. Matsushita Electric Industrial, Wenderoth Lind & Ponack, April 24, 1990: US04920390 (19 worldwide citation)

A semiconductor memory device (DRAM) includes a plurality of island regions, at least one cell transistor disposed on each island region and a cylindrical capacitor surrounding each island region. With such a structure, the capacity of the cell capacitor incorporated into a small space can be increa ...


4
Sang Ryol Yang, Yoo Chul Kong, Jin Gyun Kim, Jae Jin Shin, Jung Ho Kim, Ji Hoon Choi: Three dimensional semiconductor memory device and method of fabricating the same. Samsung Electronics, Myers Bigel Sibley & Sajovec P A, November 13, 2012: US08309405 (16 worldwide citation)

Methods of forming vertical nonvolatile memory devices may include forming an electrically insulating layer, which includes a composite of a sacrificial layer sandwiched between first and second mold layers. An opening extends through the electrically insulating layer and exposes inner sidewalls of ...


5
Tetsuo Hikawa, Akira Takata, Takashi Sawada: Semiconductor memory device and method of fabricating the same. Mega Chips Corporation, Oblon Spivak McClelland Maier & Neustadt P C, September 9, 1997: US05666304 (14 worldwide citation)

In order to improve the degree of storage data integration, side walls (32) are selectively formed on side surfaces of word lines (22) to serve as masks for changing ON-state current values of memory cells by changing widths or lengths of active regions (24) of the memory cells, thereby forming a pl ...


6
Won Ju Cho: Flash memory device and method of fabricating the same. LG Semicon, November 9, 1999: US05981993 (14 worldwide citation)

A semiconductor memory device and method of fabricating the same includes a first insulation layer and a first conductive layer formed on a substrate; conductive sidewall spacers protruding upwardly on the sides of the first conductive layer; a second insulation layer formed on the substrate and cov ...


7
Jinho Kim, Byoungkeun Son, Hansoo Kim, Wonjun Lee, Daehyun Jang: Three-dimensional semiconductor memory device and method of fabricating the same. Samsung Electronics, Lee & Morse P C, February 26, 2013: US08383482 (12 worldwide citation)

A method of fabricating a semiconductor memory device includes alternately and repeatedly stacking sacrificial layers and insulating layers on a substrate, forming an active pattern penetrating the sacrificial layers and the insulating layers, continuously patterning the insulating layers and the sa ...


8
Jun Sumino, Satoshi Shimizu: Non-volatile semiconductor memory device and method of fabricating the same. Renesas Technology, McDermott Will & Emery, June 14, 2005: US06906378 (12 worldwide citation)

There is provided a non-volatile semiconductor memory device exhibiting excellent electrical characteristics and a method of fabricating the same. The semiconductor device includes a semiconductor substrate having two trenches, an isolation oxide film provided in the trench, a floating gate electrod ...


9
Fumitaka Arai, Riichiro Shirota, Makoto Mizukami: Semiconductor memory device and method of fabricating the same. Kabushiki Kaisha Toshiba, Oblon Spivak McClelland Maier & Neustadt L, November 1, 2011: US08048741 (12 worldwide citation)

A semiconductor memory device includes: a semiconductor substrate, on which an impurity diffusion layer is formed in a cell array area; a gate wiring stack body formed on the cell array area, in which multiple gate wirings are stacked and separated from each other with insulating films; a gate insul ...


10
Tetsuo Hikawa, Akira Takata, Takashi Sawada: Semiconductor memory device and method of fabricating the same. Mega Chips Corporation, Oblon Spivak McClelland Maier & Neustadt, June 11, 1996: US05526306 (10 worldwide citation)

In order to improve the degree of storage data integration, side walls (32) are selectively formed on side surfaces of word lines (22) to serve as masks for changing ON-state current values of memory cells by changing widths or lengths of active regions (24) of the memory cells, thereby forming seve ...



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