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EUNKEE HONG
Hyongsoo Kim, Eunkee Hong, Kwangtae Hwang: Semiconductor memory devices and methods of fabricating the same. Samsung Electronics, Lee & Morse P C, August 26, 2014: US08816418

A semiconductor memory device includes at least one supporting pattern on a substrate, a storage node penetrating the supporting pattern, an electrode layer disposed around the storage node and the supporting pattern, and a capacitor dielectric interposed between the storage node and the electrode l ...


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Ken Takeuchi, Tomoharu Tanaka: Semiconductor device and memory system. Kabushiki Kaisha Toshiba, Banner & Witcoff, April 4, 2000: US06046935 (907 worldwide citation)

A semiconductor memory device comprises a memory cell array having electrically erasable and programmable memory cells arranged in rows and columns, each memory cell capable of storing n-value data (n is 3 or a greater natural number), and a data circuit having m latch circuits for holding data item ...


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Tetsuo Endoh, Yoshiyuki Tanaka, Seiichi Aritome, Riichiro Shirota, Susumu Shuto, Tomoharu Tanaka, Gertjan Hemink, Toru Tanzawa: Non-volatile semiconductor memory device and method of programming a non-volatile memory cell to a predetermined state. Kabushiki Kaisha Toshiba, Oblon Spivak McClelland Maier & Neustadt P C, June 30, 1998: US05774397 (592 worldwide citation)

A non-volatile semiconductor memory device includes a semiconductor substrate, a memory cell including source and drain regions formed in a surface region of the semiconductor substrate, and a first gate insulating film, a charge storage layer, a second gate insulating film, and a control gate seque ...


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Ken Takeuchi, Tomoharu Tanaka: Semiconductor device and memory system. Kabushiki Kaisha Toshiba, Banner & Witcoff, May 11, 1999: US05903495 (434 worldwide citation)

A semiconductor memory device comprises a memory cell array having electrically erasable and programmable memory cells arranged in rows and columns, each memory cell capable of storing n-value data (n is 3 or a greater natural number), and a data circuit having m latch circuits for holding data item ...


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Arsen Kashkashian Jr: Multiple credit card system. William H Eilberg, October 13, 1987: US04700055 (350 worldwide citation)

The present invention is a system which enables a user to carry one credit card instead of many. The information pertaining to each credit card account, such as the name of the account, the number of the account, and its expiration date, are encoded on the card, by magnetic means, with a semiconduct ...


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Tomoharu Tanaka, Jian Chen: Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell. Kabushiki Kaisha Toshiba, SanDisk Corporation, Banner & Witcoff, November 4, 2003: US06643188 (300 worldwide citation)

A non-volatile semiconductor memory device includes an electrically data rewritable non-volatile semiconductor memory cell and a write circuit for writing data in the memory cell, the write circuit writing a data in the memory cells by supplying a write voltage Vpgm and a write control voltage VBL t ...


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Noboru Shibata, Tomoharu Tanaka: Semiconductor memory device for storing multivalued data. Kabushiki Kaisha Toshiba, Hogan & Hartson, December 2, 2003: US06657891 (291 worldwide citation)

Before the next data is stored into a first memory cell in which i bits of data have been stored, i or less bits of data are written into cells adjacent to the first memory cell beforehand. The writing of i or less bits of data is done using a threshold voltage lower than the original threshold volt ...


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Satoshi Takahashi, Minoru Yamashita: Nonvolatile semiconductor memory device programming second dynamic reference cell according to threshold value of first dynamic reference cell. Fujitsu, Arent Fox Kintner Plotkin & Kahn PLLC, October 28, 2003: US06639849 (278 worldwide citation)

In a nonvolatile semiconductor memory device, first and second dynamic reference cells are subjected to a same rewriting operation as performed to a memory cell. An average reference current is obtained from the first and second dynamic reference cells, and is compared with a current of data read fr ...


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Yasuhiro Konishi, Takayuki Miyamoto, Takeshi Kajimoto, Hisashi Iwamoto: Synchronous semiconductor memory device. Mitsubishi Denki Kabushiki Kaisha, Lowe Price LeBlanc & Becker, January 24, 1995: US05384745 (277 worldwide citation)

Memory arrays are divided into banks which can be operated independent from each other. Read data storing registers and write data storing registers operating independent from each other are provided for the banks. The memory array is divided into a plurality of small array blocks, local IO lines ar ...


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Trung T Doan, D Mark Durcan, Brent D Gilgen: Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same. Micron Technology, Trask Britt, November 21, 2000: US06150253 (263 worldwide citation)

An ovonic phase-change semiconductor memory device having a reduced area of contact between electrodes of chalcogenide memories, and methods of forming the same. Such memory devices are formed by forming a tip protruding from a lower surface of a lower electrode element. An insulative material is ap ...