1
Pun Jae Choi, Jin Hyun Lee, Ki Yeol Park, Myong Soo Cho: Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same. Samsung LED, McDermott Will & Emery, June 21, 2011: US07964881 (257 worldwide citation)

There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semic ...


2
Pun Jae Choi, Jin Hyun Lee, Ki Yeol Park, Myong Soo Cho: Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same. Samsung LED, McDermott Will & Emery, July 26, 2011: US07985976 (244 worldwide citation)

There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semic ...


3
Pun Jae Choi, Jin Hyun Lee, Ki Yeol Park, Myong Soo Cho: Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same. Samsung Electronics, McDermott Will & Emery, September 11, 2012: US08263987 (243 worldwide citation)

There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semic ...


4
Katou Hanako, Mori Hiroshi, Kobayashi Hiroshi, Tonomura Tasuku, Yamazaki Masanori, Abe Mari: Member for semiconductor light-emitting device, method of manufacturing the same, and semiconductor light-emitting device using the same. Mitsubishi Chemicals, May 10, 2007: JP2007-116139 (4 worldwide citation)

PROBLEM TO BE SOLVED: To provide a new member for a semiconductor light-emitting device, the member having high transparency, light resistance, and thermal resistance and capable of sealing the semiconductor light-emitting device and holding a phosphor without causing cracks or exfoliation even over ...


5
Pun Jae Choi, Jin Hyun Lee, Ki Yeol Park, Myong Soo Cho: Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same. Samsung Electronics, McDermott Will & Emery, March 17, 2015: US08981395 (3 worldwide citation)

There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semic ...


6
Pun Jae Choi, Jin Hyun Lee, Ki Yeol Park, Myong Soo Cho: Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same. Samsung Electronics, McDermott Will & Emery, January 7, 2014: US08624276

There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semic ...


7
Katou Hanako, Mori Hiroshi, Kobayashi Hiroshi, Tonomura Tasuku, Yamazaki Masanori, Abe Mari: Member for semiconductor light-emitting device, method of manufacturing the same, and semiconductor light-emitting device using the same. Mitsubishi Chem, dingxiang lan zhaodong mei, September 17, 2008: CN200680034941

Provided is a novel member for semiconductor light emitting devices, which has excellent transparency, light resistance and heat resistance, seals the semiconductor light emitting devices and holds fluorescent material without generating cracks and peeling even when it is used for a long period of t ...


8
Pun Jae CHOI, Jin Hyun Lee, Ki Yeol Park, Myong Soo Cho: Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same. Samsung Electro-Mechanics, Mcdermott Will & Emery, April 23, 2009: US20090101923-A1

There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semic ...


9
Pun Jae CHOI, Jin Hyun Lee, Ki Yeol Park, Myong Soo Cho: Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same. Samsung LED, October 6, 2011: US20110241066-A1

There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semic ...


10
Pun Jae CHOI, Jin Hyun Lee, Ki Yeol Park, Myong Soo Cho: Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same. Samsung Electro-Mechanics, Mcdermott Will & Emery, August 5, 2010: US20100193829-A1

There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semic ...