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Jun Zeng, Mohamed N Darwish: Semiconductor device structures and related processes. MaxPower Semiconductor, Robert Groover, December 13, 2011: US08076719 (91 worldwide citation)

Improved highly reliable power RFP structures and fabrication and operation processes. The structure includes plurality of localized dopant concentrated zones beneath the trenches of RFPs, either floating or extending and merging with the body layer of the MOSFET or connecting with the source layer ...


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Jun Zeng, Mohamed N Darwish: Semiconductor device structures and related processes. MaxPower Semiconductor, Robert O Groover III, Gwendolyn S S Groover, Groover & Associates PLLC, June 18, 2013: US08466025 (2 worldwide citation)

Improved highly reliable power RFP structures and fabrication and operation processes. The structure includes plurality of localized dopant concentrated zones beneath the trenches of RFPs, either floating or extending and merging with the body layer of the MOSFET or connecting with the source layer ...


3
Jun Zeng, Mohamed N Darwish: Semiconductor device structures and related processes. MaxPower Semiconductor, Robert O Groover III, Gwendolyn S S Groover, Groover & Associates PLLC, February 25, 2014: US08659076

Improved highly reliable power RFP structures and fabrication and operation processes. The structure includes plurality of localized dopant concentrated zones beneath the trenches of RFPs, either floating or extending and merging with the body layer of the MOSFET or connecting with the source layer ...


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Jun Zeng, Mohamed N Darwish: Semiconductor Device Structures and Related Processes. Maxpower Semiconductor, GROOVER & Associates, August 20, 2009: US20090206924-A1

Improved highly reliable power RFP structures and fabrication and operation processes. The structure includes plurality of localized dopant concentrated zones beneath the trenches of RFPs, either floating or extending and merging with the body layer of the MOSFET or connecting with the source layer ...


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Jun Zeng, Mohamed N Darwish: Semiconductor Device Structures and Related Processes. Maxpower Semiconductor, February 9, 2012: US20120032258-A1

Improved highly reliable power RFP structures and fabrication and operation processes. The structure includes plurality of localized dopant concentrated zones beneath the trenches of RFPs, either floating or extending and merging with the body layer of the MOSFET or connecting with the source layer ...


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Zeng Jun, Darwish Mohamed N: Semiconductor device structures and related processes. Maxpower Semiconductor, Zeng Jun, Darwish Mohamed N, GROOVER Robert O, August 20, 2009: WO/2009/102684

Improved highly reliable power RFP structures and fabrication and operation processes. The structure includes plurality of localized dopant concentrated zones beneath the trenches of RFPs, either floating or extending and merging with the body layer of the MOSFET or connecting with the source layer ...


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Jun Zeng, Mohamed N Darwish: Semiconductor Device Structures and Related Processes. Maxpower Semiconductor, December 8, 2011: US20110298043-A1

Improved highly reliable power RFP structures and fabrication and operation processes. The structure includes plurality of localized dopant concentrated zones beneath the trenches of RFPs, either floating or extending and merging with the body layer of the MOSFET or connecting with the source layer ...


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Zeng Jun, Darwish Mohamed N: Semiconductor device structures and related processes. Maxpower Semiconductor, liu yungui, April 6, 2011: CN200980113105

Improved highly reliable power RFP structures and fabrication and operation processes. The structure includes plurality of localized dopant concentrated zones beneath the trenches of RFPs, either floating or extending and merging with the body layer of the MOSFET or connecting with the source layer ...