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James F Wenzel, Mona A Chopra, Stephen W Foster: Semiconductor device having built-in high frequency bypass capacitor. Motorola, June 3, 1997: US05635767 (155 worldwide citation)

A high frequency bypass capacitor (36, 36') is built into a thin-film portion (16, 16') of a polymer carrier substrate (15) of a PBGA (10). The carrier substrate (15) has both a stiffener (18) and a thin-film portion (16, 16') which has multiple metal layers (24, 28, 30, 32). The power supply planes ...


2
James F Wenzel, Mona A Chopra, Stephen W Foster: Semiconductor device having built-in high frequency bypass capacitor and method for its fabrication. Motorola, September 21, 1996: TW286433

A high frequency bypass capacitor (36, 36') is built into a ?thin-film portion (16, 16') of a polymer carrier substrate (15) ?of a PBGA (10). The carrier substrate (15) has both a stiffener ?(18) and a thin-film portion (16, 16') which has multiple metal ?layers (24, 28, 30, 32). The power supply pl ...


3