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Sey Ping Sun, David E Brown: Semiconductor device based on Si-Ge with high stress liner for enhanced channel carrier mobility. Advanced Micro Devices, May 30, 2006: US07053400 (33 worldwide citation)

The carrier mobility in transistor channel regions of Si—Ge devices is increased by employing a stressed liner. Embodiments include applying a high compressive or tensile stressed film overlying relaxed source/drain regions. Other embodiments include applying a high compressively or high tensilely s ...


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Sun Sey Ping, Brown David E: Semiconductor device based on si-ge with high stress liner for enhanced channel carrier mobility. Advanced Micro Devices, Sun Sey Ping, Brown David E, DRAKE Paul S, November 24, 2005: WO/2005/112127 (5 worldwide citation)

The carrier mobility in transistor channel regions of Si-Ge devices is increased by employing a stressed liner. Embodiments include applying a high compressive or tensile stressed film overlying relaxed source/drain regions. Other embodiments include applying a high compressively (90) or high tensil ...


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Sun Sey Ping, Brown David E: Semiconductor device based on si-ge with high stress liner for enhanced channel carrier mobility. Advanced Micro Devices, February 14, 2007: GB2429116-A

The carrier mobility in transistor channel regions of Si-Ge devices is increased by employing a stressed liner. Embodiments include applying a high compressive or tensile stressed film overlying relaxed source/drain regions. Other embodiments include applying a high compressively (90) or high tensil ...


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Sey Ping Sun, David E Brown: Semiconductor device based on Si-Ge with high stress liner for enhanced channel carrier mobility. Advanced Micro Devices, McDERMOTT WILL & EMERY, November 10, 2005: US20050247926-A1

The carrier mobility in transistor channel regions of Si—Ge devices is increased by employing a stressed liner. Embodiments include applying a high compressive or tensile stressed film overlying relaxed source/drain regions. Other embodiments include applying a high compressively or high tensilely s ...


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Sey Ping Sun, David E Brown: Semiconductor device based on Si-Ge with high stress liner for enhanced channel carrier mobility. Advanced Micro Devices, Mcdermott Will & Emery, September 21, 2006: US20060208250-A1

The carrier mobility in transistor channel regions of Si—Ge devices is increased by employing a stressed liner. Embodiments include applying a high compressive or tensile stressed film overlying relaxed source/drain regions. Other embodiments include applying a high compressively or high tensilely s ...


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Sun Sey Ping, Brown David E: Semiconductor device based on si-ge with high stress liner for enhanced channel carrier mobility. Advanced Micro Devices, gebo chengwei, April 18, 2007: CN200580014063

The carrier mobility in transistor channel regions of Si-Ge devices is increased by employing a stressed liner. Embodiments include applying a high compressive or tensile stressed film overlying relaxed source/drain regions. Other embodiments include applying a high compressively (90) or high tensil ...


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Sun Sey Ping, Brown David E: Semiconductor device based on si-ge with high stress liner for enhanced channel carrier mobility. Advanced Micro Devices, February 12, 2007: KR1020067023672

The carrier mobility in transistor channel regions of Si-Ge devices is increased by employing a stressed liner. Embodiments include applying a high compressive or tensile stressed film overlying relaxed source/drain regions. Other embodiments include applying a high compressively (90) or high tensil ...


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