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EUNKEE HONG
Honggun Kim, YongSoon Choi, Ha Young Yi, Eunkee Hong: Semiconductor device and method of fabricating the same. Samsung Electronics, Lee & Morse P C, July 2, 2013: US08476715

A semiconductor device and a method of fabricating thereof, including preparing a substrate including a first and second region; forming first and second conductive lines on the first and second region, respectively, the first conductive lines being spaced apart at a first interval and the second co ...


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Seiji Imai, Yoshiko Hiraoka, Atsushi Kurobe, Naoharu Sugiyama, Tsutomu Tezuka: Si-SiGe semiconductor device and method of fabricating the same. Kabushiki Kaisha Toshiba, Oblon Spivak McClelland Maier & Neustadt P C, December 8, 1998: US05847419 (246 worldwide citation)

A semiconductor device comprises a semiconductor substrate, a first semiconductor layer under compressive strain formed on the semiconductor substrate, a p-type MISFET (Metal Insulator Semiconductor Field Effect Transistor) formed in a predetermined region of the first semiconductor layer, a second ...


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Shunpei Yamazaki, Jun Koyama: Semiconductor device and method of fabricating the same. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office, October 22, 2002: US06469317 (160 worldwide citation)

The purpose of the present invention is to provide a reliable semiconductor device comprising TFTs having a large area integrated circuit with low wiring resistance. One of the features of the present invention is that an LDD region including a region which overlaps with a gate electrode and a regio ...


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Shunpei Yamazaki, Jun Koyama, Hiroshi Shibata, Takeshi Fukunaga: Semiconductor device and method of fabricating the same. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, October 28, 2003: US06639244 (149 worldwide citation)

A semiconductor device having high TFT characteristics is realized. In a pixel matrix circuit of an AM-LCD, a lower electrode of a storage capacitor is made to include an element in group


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Shunpei Yamazaki, Jun Koyama: Semiconductor device and method of fabricating the same. Semiconductor Energy Laboratory, Jeffrey L Costellia, Nixon Peabody, February 25, 2003: US06524895 (119 worldwide citation)

Reliability of crystalline TFTs is improved in a large area integrated circuit typified by an active matrix type liquid crystal display device. In TFTs having an LDD structure, a region whose LDD region overlaps with a gate electrode and a region not overlapping with the gate electrode are fabricate ...


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Shunpei Yamazaki, Hisashi Ohtani, Hideomi Suzawa, Toru Takayama: Semiconductor device and method of fabricating the same. Semiconductor Energy Laboratory, Cook Alex McFarron Manzo Cummings & Mehler, June 26, 2007: US07235810 (109 worldwide citation)

There is provided a crystalline TFT in which reliability comparable to or superior to a MOS transistor can be obtained and excellent characteristics can be obtained in both an on state and an off state. A gate electrode of the crystalline TFT is formed of a laminate structure of a first gate electro ...


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Shunpei Yamazaki, Hongyong Zhang, Yasuhiko Takemura: Semiconductor device and method of fabricating the same. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Eric J Robinson, Sixbey Friedman Leedom & Ferguson PC, June 30, 1998: US05773327 (109 worldwide citation)

A method for improving the reliability and yield of a thin film transistor by controlling the crystallinity thereof. The method comprises the steps of forming a gate electrode on an island amorphous silicon film, injecting an impurity using the gate electrode as a mask, forming a coating film contai ...


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Akira Hokazono: Semiconductor device and method of fabricating the same. Kabushiki Kaisha Toshiba, Oblon Spivak McClelland Maier & Neustadt L, February 15, 2011: US07888747 (109 worldwide citation)

A semiconductor device includes a semiconductor substrate; a first impurity diffusion suppression layer and a thicker second impurity diffusion suppression layer formed on the semiconductor substrate in first and second isolated transistor regions; first and second crystal layers formed on the first ...


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Shunpei Yamazaki, Taketomi Asami, Toru Takayama, Ritsuko Kawasaki, Hiroki Adachi, Naoya Sakamoto, Masahiko Hayakawa, Hiroshi Shibata, Yasuyuki Arai: Semiconductor device and method of fabricating the same. Semiconductor Energy Laboratory, Cook Alex McFarron Manzo Cummings & Mehler, April 30, 2002: US06380558 (98 worldwide citation)

In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of th ...


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Yoshiharu Hirakata, Yuugo Goto, Yuko Kobayashi, Shunpei Yamazaki: Semiconductor device and method of fabricating the same. Semiconductor Energy Laboratory, Jeffrey L Costellia, Nixon Peabody, October 28, 2003: US06638781 (94 worldwide citation)

There is provided a high quality liquid crystal panel having a thickness with high accuracy, which is designed, without using a particulate spacer, within a free range in accordance with characteristics of a used liquid crystal and a driving method, and is also provided a method of fabricating the s ...