1
Hsiang Lan Lung: Self-aligned small contact phase-change memory method and device. Macronix International, Ernest J Beffel Jr, Haynes Beffel & Wolfeld, May 22, 2007: US07220983 (201 worldwide citation)

The invention relates to a novel memory cell structure and process to fabricate chalcogenide phase change memory. More particularly, it produces a small cross-sectional area of a chalcogenide-electrode contact part of the phase change memory, which affects the current/power requirement of the chalco ...


2
Hsiang Lan Lung: Self-aligned small contact phase-change memory method and device. Macronix International, Macronix, C O Haynes Beffell & Wolfeld, June 15, 2006: US20060124916-A1

The invention relates to a novel memory cell structure and process to fabricate chalcogenide phase change memory. More particularly, it produces a small cross-sectional area of a chalcogenide-electrode contact part of the phase change memory, which affects the current/power requirement of the chalco ...