1
Jingchun Zhang, Anchuan Wang, Nitin K Ingle: Selective etch for silicon films. Applied Materials, Kilpatrick Townsend & Stockton, April 26, 2016: US09324576 (51 worldwide citation)

A method of etching patterned heterogeneous silicon-containing structures is described and includes a remote plasma etch with inverted selectivity compared to existing remote plasma etches. The methods may be used to conformally trim polysilicon while removing little or no silicon oxide. More genera ...


2
ZHANG Jingchun, WANG Anchuan, INGLE Nitin K: Gravure sélective pour des films de silicium, Selective etch for silicon films. Applied Materials, ZHANG Jingchun, WANG Anchuan, INGLE Nitin K, BERNARD Eugene J, December 1, 2011: WO/2011/149638 (21 worldwide citation)

A method of etching patterned heterogeneous silicon-containing structures is described and includes a remote plasma etch with inverted selectivity compared to existing remote plasma etches. The methods may be used to conformally trim polysilicon while removing little or no silicon oxide. More genera ...


3
Jingchun Zhang, Anchuan Wang, Nitin K Ingle: Selective etch for silicon films. Applied Materials, Kilpatrick Townsend & Stockton, September 5, 2017: US09754800 (19 worldwide citation)

A method of etching patterned heterogeneous silicon-containing structures is described and includes a remote plasma etch with inverted selectivity compared to existing remote plasma etches. The methods may be used to conformally trim polysilicon while removing little or no silicon oxide. More genera ...


4
Jingchun Zhang, Anchuan Wang, Nitin K Ingle: Selective etch for silicon films. Applied Materials, December 1, 2011: US20110294300-A1

A method of etching patterned heterogeneous silicon-containing structures is described and includes a remote plasma etch with inverted selectivity compared to existing remote plasma etches. The methods may be used to conformally trim polysilicon while removing little or no silicon oxide. More genera ...


5
SELECTIVE ETCH FOR SILICON FILMS. Applied Materials, August 18, 2016: US20160240389-A1

A method of etching patterned heterogeneous silicon-containing structures is described and includes a remote plasma etch with inverted selectivity compared to existing remote plasma etches. The methods may be used to conformally trim polysilicon while removing little or no silicon oxide. More genera ...