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Matthias Bauer
Matthias Bauer, Keith Doran Weeks: Selective epitaxial formation of semiconductor films. ASM America, Knobbe Martens Olson & Bear, October 2, 2012: US08278176 (82 worldwide citation)

Epitaxial layers are selectively formed in semiconductor windows by a cyclical process of repeated blanket deposition and selective etching. The blanket deposition phases leave non-epitaxial material over insulating regions, such as field oxide, and the selective etch phases preferentially remove no ...


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Matthias Bauer
Matthias Bauer, Keith Doran Weeks: Selective epitaxial formation of semiconductor films. Asm America, Knobbe Martens Olsen & Bear, December 13, 2007: US20070287272-A1

Epitaxial layers are selectively formed in semiconductor windows by a cyclical process of repeated blanket deposition and selective etching. The blanket deposition phases leave non-epitaxial material over insulating regions, such as field oxide, and the selective etch phases preferentially remove no ...


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Bauer Matthias, Weeks Keith Doran: Selective epitaxial formation of semiconductor films. Asm, February 11, 2009: EP2022083-A2

Epitaxial layers are selectively formed in semiconductor windows by a cyclical process of repeated blanket deposition and selective etching. The blanket deposition phases leave non-epitaxial material over insulating regions, such as field oxide, and the selective etch phases preferentially remove no ...


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Bauer Matthias, Weeks Keith Doran: Selective epitaxial formation of semiconductor films. Asm America, Bauer Matthias, Weeks Keith Doran, DELANEY Karoline A, December 21, 2007: WO/2007/145758

Epitaxial layers (125) are selectively formed in semiconductor windows (114) by a cyclical process of repeated blanket deposition and selective etching. The blanket deposition phases leave non-epitaxial material (120) over insulating regions (112), such as field oxide, and the selective etch phases ...


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Bauer Matthias, Weeks Keith Doran: Selective epitaxial formation of semiconductor films. ASM, Zhao Rongmin, June 10, 2009: CN200780019831

Epitaxial layers (125) are selectively formed in semiconductor windows (114) by a cyclical process of repeated blanket deposition and selective etching. The blanket deposition phases leave non-epitaxial material (120) over insulating regions (112), such as field oxide, and the selective etch phases ...


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