1
Tsu Jae King, Victor Moroz: Segmented channel MOS transistor. Synopsys, Bever Hoffman & Harms, Jeanette S Harms, July 24, 2007: US07247887 (313 worldwide citation)

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repe ...


2
Tsu Jae King Liu, Qiang Lu: Enhanced segmented channel MOS transistor with narrowed base regions. Synopsys, Silicon Valley Patent Group, Edward S Mao, March 24, 2009: US07508031 (213 worldwide citation)

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably produced ...


3
Tsu Jae King Liu, Qiang Lu: Enhanced segmented channel MOS transistor with high-permittivity dielectric isolation material. Synopsys, Silicon Valley Patent Group, Edward S Mao, October 20, 2009: US07605449 (208 worldwide citation)

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repe ...


4
Tse Jae King Liu, Qiang Lu: Enhanced segmented channel MOS transistor with multi layer regions. Synopsys, Fenwick & West, June 18, 2013: US08466490 (7 worldwide citation)

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably produced ...


5
Tsu Jae King Liu, Qiang Lu: Enhanced Segmented Channel MOS Transistor with Multi Layer Regions. Synopsys, Silcon Valley Patent Group, May 31, 2007: US20070120156-A1

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repe ...


6
Tsu Jae King, Victor Moroz: Segmented channel MOS transistor. Bever Hoffman & Harms, January 4, 2007: US20070001237-A1

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repe ...


7
Tsu Jae King Liu, Qiang Lu: Enhanced Segmented Channel MOS Transistor with Narrowed Base Regions. Synopsys, Silcon Valley Patent Group, June 7, 2007: US20070128782-A1

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repe ...


8
Tsu Jae King Liu, Qiang Lu: Enhanced Segmented Channel MOS Transistor with High-Permittivity Dielectric Isolation Material. Synopsys, Silcon Valley Patent Group, May 31, 2007: US20070122953-A1

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repe ...



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