1
Robert C Wong: Secure and static 4T SRAM cells in EDRAM technology. International Business Machines Corporation, Whitham Curtis & Christofferson P C, Ira D Blecker, May 3, 2005: US06888741 (2 worldwide citation)

Disclosed herein is a 4T (four transistor) SRAM cells. Stability, fabrication and integration density advantages as well as a high degree of soft error immunity with small and potentially tailorable write delay penalty may potentially be available in a memory cell by providing a source of pull down ...


2
Robert C Wong: Secure and static 4T SRAM cells in EDRAM technology. International Business Machines Corporation, Whitham Curtis & Christofferson PC, February 19, 2004: US20040032761-A1

Disclosed herein is a 4T (four transistor) SRAM cells. Stability, fabrication and integration density advantages as well as a high degree of soft error immunity with small and potentially tailorable write delay penalty may potentially be available in a memory cell by providing a source of pull down ...