1
Bantval J Baliga: Schottky barrier rectifiers and methods of forming same. North Carolina State University, Bell Seltzer Park & Gibson, March 18, 1997: US05612567 (93 worldwide citation)

A Schottky rectifier includes MOS-filled trenches and an anode electrode at a face of a semiconductor substrate and an optimally nonuniformly doped drift region therein which in combination provide high blocking voltage capability with low reverse-biased leakage current and low forward voltage drop. ...


2
Baliga Bantval Jayant: Schottky barrier rectifiers and methods of forming same. North Carolina State University, Baliga Bantval Jayant, SIBLEY Kenneth D, November 20, 1997: WO/1997/043789

A Schottky rectifier (10) includes MOS-filled trenches and an anode electrode at a face of a semiconductor substrate and an optimally nonuniformly doped drift (12d) region therein which in combination provide high blocking voltage capability with low reverse-biased leakage current and low forward vo ...


3
Baliga Bantval Jayant: Schottky barrier rectifiers and methods of forming same. Univ North Carolina, March 24, 1999: EP0902981-A1

A Schottky rectifier includes MOS-filled trenches and an anode electrode at a face of a semiconductor substrate and an optimally nonuniformly doped drift region therein which in combination provide high blocking voltage capability with low reverse-biased leakage current and low forward voltage drop. ...


4
Baliga Bantval Jayant: Schottky barrier rectifiers and methods of forming same. North Carolina State University, February 25, 2000: KR1019980709077

PURPOSE: A Schottky rectifier provide high blocking voltage capability with low reverse biased leakage current and low forward voltage drop by including MOS filled trenches and an anode electrode at a face of a semiconductor substrate and an optimally non-uniformly doped drift region therein which i ...