1
Shivaling S Mahant Shetti, Thomas J Aton, Rebecca J Gale: Scanning electron microscope based parametric testing method and apparatus. Texas Instruments Incorporated, Ira S Matsil, B Peter Barndt, Richard L Donaldson, November 3, 1992: US05159752 (116 worldwide citation)

A scanning electron microscope (28) is connected to a test structure (48) formed on a semiconductor wafer. The test structure (48) comprises a plurality of first parallel structures (54) and a plurality of second parallel structure (56) transverse to and interlocking with the first structures (54). ...


2
Shivaling S Mahant Shetti, Thomas J Aton, Rebeca J Gale: Scanning electron microscope based parametric testing method and apparatus. Texas Instruments Incorporated, Stanton C Braden, Richard Donaldson, Melvin Sharp, December 18, 1990: US04978908 (15 worldwide citation)

A scanning electron microscope (28) is connected to a test structure (48) formed on a semiconductor wafer. The test structure (48) comprises a plurality of first parallel structures (54) and a plurality of second parallel structure (56) transverse to and interlocking with the first structures (54). ...


3
Thomas J Aton: Scanning electron microscope based parametric testing method and apparatus. Texas Instruments Incorporated, James C Kesterson, James T Comfort, Melvin Sharp, October 1, 1991: US05053699 (10 worldwide citation)

A scanning electron microscope (SEM) (24), or other irradiating device, is used to create a potential in sample areas (39b) of a test structure (39) formed on the surface of an integrated circuit wafer. A conduction path between the irradiated sample area and a common area (39a) is detected via an a ...