1
Hsin Jung Ho, Chang Rong Wu, Wei Chia Chen: 1T1R resistive memory device and fabrication method thereof. Nanya Technology, Winston Hsu, Scott Margo, March 12, 2013: US08395139 (3 worldwide citation)

A memory structure includes an active area surrounded by first isolation trenches and second isolation trenches; a bit line trench recessed into the active area of the semiconductor substrate; a word line trench recessed into the active area of the semiconductor substrate and being shallower than th ...


2
Jae Min Oh: Resistive memory device and fabrication method thereof. SK hynix, Kilpatrick Townsend & Stockton, October 14, 2014: US08860003 (2 worldwide citation)

A resistive memory device capable of implementing a multi-level cell (MLC) and a fabrication method thereof are provided. The resistive memory device includes a lower electrode connected to a switching device and including a first node and a second node formed on a top thereof to be spaced at a fixe ...


3
Nam Kyun Park: Resistive memory device and fabrication method thereof. SK Hynix, IP & T Group, April 8, 2014: US08692225

A resistive memory device capable of suppressing disturbance between cells and a fabrication method thereof are provided. The resistive memory device includes a word line formed, in a first direction, on a semiconductor substrate, lower access structures, each having a pillar shape, formed on the wo ...


4
Jae Min Oh: Resistive memory device and fabrication method thereof. SK hynix, Kilpatrick Townsend & Stockton, April 14, 2015: US09006076

A resistive memory device capable of implementing a multi-level cell (MLC) and a fabrication method thereof are provided. The resistive memory device includes a lower electrode connected to a switching device and including a first node and a second node formed on a top thereof to be spaced at a fixe ...


5
Han Woo Cho, Hyo Seob Yoon, Yong Seok Lee: Resistive memory device and fabrication method thereof. SK Hynix, IP & T Group, May 5, 2015: US09024291

A resistive memory device and a fabrication method thereof are provided. The resistive memory device includes a bottom structure including a heating electrode, data storage materials, each of the data storage materials formed on the bottom structure in a confined structure perpendicular to the botto ...


6
Min Yong Lee, Young Ho Lee, Seung Beom Baek, Jong Chul Lee: Resistive memory device and fabrication method thereof. SK Hynix, IP & T Group, March 17, 2015: US08980683

A resistive memory device and a fabrication method thereof are provided. The resistive memory device includes a variable resistive layer formed on a semiconductor substrate in which a bottom structure is formed, a lower electrode formed on the variable resistive layer, a switching unit formed on the ...


7
RESISTIVE MEMORY DEVICE AND FABRICATION METHOD THEREOF. September 5, 2013: US20130228733-A1

A resistive memory device and a fabrication method thereof are provided. The resistive memory device includes a variable resistive layer formed on a semiconductor substrate in which a bottom structure is formed, a lower electrode formed on the variable resistive layer, a switching unit formed on the ...


8
RESISTIVE MEMORY DEVICE AND FABRICATION METHOD THEREOF. SK hynix, September 19, 2013: US20130240824-A1

A resistive memory device capable of implementing a multi-level cell (MLC) and a fabrication method thereof are provided. The resistive memory device includes a lower electrode connected to a switching device and including a first node and a second node formed on a top thereof to be spaced at a fixe ...


9
RESISTIVE MEMORY DEVICE AND FABRICATION METHOD THEREOF. November 28, 2013: US20130313504-A1

A resistive memory device capable of suppressing disturbance between cells and a fabrication method thereof are provided. The resistive memory device includes a word line formed, in a first direction, on a semiconductor substrate, lower access structures, each having a pillar shape, formed on the wo ...


10
RESISTIVE MEMORY DEVICE AND FABRICATION METHOD THEREOF. November 28, 2013: US20130313664-A1

A resistive memory device capable of minimizing operation current and a fabrication method thereof are provided. The resistive memory device includes an access device, a heating electrode formed on the access device and serving as a magnetoresistance device, and a variable resistance material formed ...



Click the thumbnails below to visualize the patent trend.