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Ward D Parkinson, Tyler A Lowrey: Refreshing memory cells of a phase change material memory device. Intel Corporation, Anthony M Martinez, July 27, 2004: US06768665 (53 worldwide citation)

Briefly, in accordance with an embodiment of the invention, an apparatus and method to provide refreshing of a memory cell of a phase change memory device is provided. The method includes determining whether a storage level of a phase change memory cell is within a predetermined margin from a resist ...


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Parkinson Ward D, Lowrey Tyler A: Refreshing memory cells of a phase change material memory device. Intel, May 4, 2005: EP1527456-A2

A technique includes determining whether a storage level of a phase change memory cell is within a predefined margin from a resistance threshold. In response to the determination, the cell is selectively written.


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Ward D Parkinson, Tyler A Lowrey: Refreshing memory cells of a phase change material memory device. Timothy N Trop, Trop Pruner & Hu PC, February 5, 2004: US20040022085-A1

A technique includes determining whether a storage level of a phase change memory cell is within a predefined margin from a resistance threshold. In response to the determination, the cell is selectively written.


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Parkinson Ward D, Lowrey Tyler A: Refreshing memory cells of a phase change material memory device. Intel Corporation, MALLIE Michael J, February 12, 2004: WO/2004/013862

A technique includes determining whether a storage level of a phase change memory cell is within a predefined margin from a resistance threshold. In response to the determination, the cell is selectively written.


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Parkinson Ward D, Lowrey Tyler A: Refreshing memory cells of a phase change material memory device. Intel Corporation, September 11, 2006: TWI261752

A technique includes determining whether a storage level of a phase, change memory cell is within a predefined margin from a resistance threshold. In response to the determination, the cell is selectively written.


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