1
Kenneth E Beilstein Jr, Harish N Kotecha: Quaternary FET read only memory. International Business Machines Corporation, John E Hoel, May 6, 1980: US04202044 (66 worldwide citation)

A quaternary FET read only memory is disclosed wherein each FET storage element in the array has its threshold adjusted by ion-implantation to one of four values. Each FET element in the array has its drain connected to a drain potential V.sub.DD. A binary input signal from a conventional binary, tr ...


2
Kenneth E Beilstein Jr, Harish N Kotecha: Quaternary FET read only memory. International Business Machines Corporation, John E Hoel, April 14, 1987: USRE032401

A quaternary FET read only memory is disclosed wherein each FET storage element in the array has its threshold adjusted by ion-implantation to one of four values. Each FET element in the array has its drain connected to a drain potential V.sub.DD. A binary input signal from a conventional binary, tr ...