1
Terry L Gilton: Programmable conductor memory cell structure. Micron Technology, Dickstein Shapiro Morin & Oshinsky, March 8, 2005: US06864500 (223 worldwide citation)

In programmable conductor memory cells, metal ions precipitate out of a glass electrolyte element in response to an applied electric field in one direction only, causing a conductive pathway to grow from cathode to anode. The amount of conductive pathway growth, and therefore the programming, depend ...


2
Terry L Gilton: Programmable conductor memory cell structure and method therefor. Micron Technology, Dickstein Shapiro, November 7, 2006: US07132675 (176 worldwide citation)

In programmable conductor memory cells, metal ions precipitate out of a glass electrolyte element in response to an applied electric field in one direction only, causing a conductive pathway to grow from cathode to anode. The amount of conductive pathway growth, and therefore the programming, depend ...


3
Terry L Gilton: Programmable conductor memory cell structure and method therefor. Micron Technology, Dickstein Shapiro Morin & Oshinsky, January 4, 2005: US06838307 (4 worldwide citation)

In programmable conductor memory cells, metal ions precipitate out of a glass electrolyte element in response to an applied electric field in one direction only, causing a conductive pathway to grow from cathode to anode. The amount of conductive pathway growth, and therefore the programming, depend ...


4
Terry L Gilton: Programmable conductor memory cell structure and method therefor. Micron Technology, Dickstein Shapiro, June 16, 2009: US07547905 (3 worldwide citation)

In programmable conductor memory cells, metal ions precipitate out of a glass electrolyte element in response to an applied electric field in one direction only, causing a conductive pathway to grow from cathode to anode. The amount of conductive pathway growth, and therefore the programming, depend ...


5
Terry L Gilton: Programmable conductor memory cell structure and method therefor. Dickstein Shapiro Morin & Oshinsky, November 18, 2004: US20040228164-A1

In programmable conductor memory cells, metal ions precipitate out of a glass electrolyte element in response to an applied electric field in one direction only, causing a conductive pathway to grow from cathode to anode. The amount of conductive pathway growth, and therefore the programming, depend ...


6
Terry L Gilton: Programmable conductor memory cell structure and method therefor. Micron Technology, Knobbe Martens Olson & Bear, February 26, 2004: US20040038432-A1

In programmable conductor memory cells, metal ions precipitate out of a glass electrolyte element in response to an applied electric field in one direction only, causing a conductive pathway to grow from cathode to anode. The amount of conductive pathway growth, and therefore the programming, depend ...


7
Terry L Gilton: Programmable conductor memory cell structure and method therefor. Knobbe Martens Olson & Bear, October 16, 2003: US20030193059-A1

In programmable conductor memory cells, metal ions precipitate out of a glass electrolyte element in response to an applied electric field in one direction only, causing a conductive pathway to grow from cathode to anode. The amount of conductive pathway growth, and therefore the programming, depend ...


8
Terry L Gilton: Programmable conductor memory cell structure and method therefor. Micron Technology, Dickstein Shapiro, September 21, 2006: US20060208249-A1

In programmable conductor memory cells, metal ions precipitate out of a glass electrolyte element in response to an applied electric field in one direction only, causing a conductive pathway to grow from cathode to anode. The amount of conductive pathway growth, and therefore the programming, depend ...