1
Nicholas H Tripsas, Matthew S Buynoski, Suzette K Pangrle, Uzodinma Okoroanyanwu, Angela T Hui, Christopher F Lyons, Ramkumar Subramanian, Sergey D Lopatin, Minh Van Ngo, Ashok M Khathuria, Mark S Chang, Patrick K Cheung, Jane V Oglesby: Polymer memory device formed in via opening. Advanced Micro Devices, Amin & Turocy, September 7, 2004: US06787458 (35 worldwide citation)

One aspect of the present invention relates to a method of fabricating a polymer memory device in a via. The method involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least one copper contact in the metal-containing layer, forming at least one ...


2
Tripsas Nicholas, Buynoski Matthew S, Pangrle Suzette, Okoroanyanwu Uzodinma, Hui Angela T, Lyons Christopher F, Subramanian Ramkumar, Lopatin Sergey D, Ngo Minh Van, Khathuria Ashok M, Chang Mark S, Cheung Patrick K, Oglesby Jane V: Polymer memory device formed in via opening. Advanced Micro Devices, April 19, 2006: GB2419231-A

One aspect of the present invention relates to a method of fabricating a polymer memory device in a via. The method involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least one copper contact in the metal-containing layer, forming at least one ...


3

4
Tripsas Nicholas H, Buynoski Matthew, Pangrle Suzette K, Okoroanyanwu Uzodinma, Hui Angela T, Lyons Christopher F, Subramanian Ramkumar, Lopatin Sergey D, Ngo Minh Van, Khathuria Ashok M, Chang Mark S, Cheung Patrick K, Oglesby Jane V: Polymer memory device formed in via opening. Advanced Micro Devices, Tripsas Nicholas H, Buynoski Matthew, Pangrle Suzette K, Okoroanyanwu Uzodinma, Hui Angela T, Lyons Christopher F, Subramanian Ramkumar, Lopatin Sergey D, Ngo Minh Van, Khathuria Ashok M, Chang Mark S, Cheung Patrick K, Oglesby Jane V, sCOLLOPY Daniel R, February 3, 2005: WO/2005/010892

One aspect of the present invention relates to a method of fabricating a polymer memory device in a via. The method involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least one copper contact in the metal-containing layer, forming at least one ...


5
Tripsas Nicholas H, Buynoski Matthew, Pangrle Suzette K, Okoroanyanwu Uzodinma, Hui Angela T, Subramanian Ramkumar, Lopatin Sergey D, Ngo Minh Van, Khathuria Ashok M, Chang Mark S, Oglesby Jane V: Polymer memory device formed in via opening. Advanced Micro Devices, ge bo cheng wei, August 16, 2006: CN200480019684

One aspect of the present invention relates to a method of fabricating a polymer memory device in a via. The method involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least one copper contact in the metal-containing layer, forming at least one ...


6
Tripsas Nicholas H, Buynoski Matthew, Pangrle Suzette K, Okoroanyanwu Uzodinma, Hui Angela T, Lyons Christopher F, Subramanian Ramkumar, Lopatin Sergey D, Ngo Minh Van, Khathuria Ashok M, Chang Mark S, Cheung Patrick K, Oglesby Jane V: Polymer memory device formed in via opening. Advanced Micro Devices, May 3, 2006: KR1020067000426

One aspect of the present invention relates to a method of fabricating a polymer memory device in a via. The method involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least one copper contact in the metal-containing layer, forming at least one ...


7

8

9


Click the thumbnails below to visualize the patent trend.