Chen Chung Yi, Lin Ming Yu, Fu Ching Hung, Wu Yueh Chi: Phase change material memory device and method of fabricating the same. Promos Technologies, December 1, 2007: TW200744159

A PCM memory device and a method of fabricating the same are provided. The memory device comprises a lower electrode, a dielectric layer, a conductor spacer, an interfacial layer and a PCM layer. The dielectric layer is disposed above the lower electrode and the dielectric layer further comprises an ...