31
Lowrey Tyler A, Parkinson Ward D, Gill Manzur: Technique and apparatus for performing write operations to a phase change material memory device. Ovonyx, TROP Timothy N, May 8, 2003: WO/2003/038830

A technique includes, in response to a request to write data to memory cells (140) of a phase change memory device (33), placing the memory cells (140) in a state that is shared in common among the memory cells (140). Also, in response to this request, the data is written to the memory cells (140).


32
Furkay Stephen S, Hamann Hendrick T, Johnson Jeffrey B, Lam Chung H, Wong Hon Sum P: Phase change memory cell on silicon-on insulator substrate. Ibm, fu jianjun, September 21, 2005: CN200510054831

The present invention includes a method for forming a phase change material memory device and the phase change memory device produced therefrom. Specifically, the phase change memory device includes a semiconductor structure including a substrate having a first doped region flanked by a set of secon ...


33
Lowrey Tyler A: Phase change material memory device. Intel, zhang shegao zheng jianhui, December 8, 2004: CN02817567

A phase change material memory cell (10) may be formed with singulated, cup-shaped phase change material (18). The interior of the cup-shaped phase change material (18) may be filled with a thermal insulating material (22). As a result, heat losses upwardly through the phase change material (18) may ...


34
Lowrey Tyler A, Parkinson Ward D, Gill Manzur: Technique and apparatus for performing write operations to a phase change material memory device. Ovonyx, cheng tianzheng zhang zhicheng, April 27, 2005: CN02826572

A technique includes, in response to a request to write data to memory cells (140) of a phase change memory device (33), placing the memory cells (140) in a state that is shared in common among the memory cells (140). Also, in response to this request, the data is written to the memory cells (140).


35
Parkinson Ward D, Lowrey Tyler A: Refreshing memory cells of a phase change material memory device. Intel Corporation, September 11, 2006: TWI261752

A technique includes determining whether a storage level of a phase, change memory cell is within a predefined margin from a resistance threshold. In response to the determination, the cell is selectively written.


36
Chen Chung Yi, Lin Ming Yu, Fu Ching Hung, Wu Yueh Chi: Phase change material memory device and method of fabricating the same. Promos Technologies, December 1, 2007: TW200744159

A PCM memory device and a method of fabricating the same are provided. The memory device comprises a lower electrode, a dielectric layer, a conductor spacer, an interfacial layer and a PCM layer. The dielectric layer is disposed above the lower electrode and the dielectric layer further comprises an ...


37
Parkinson Ward D, Lowrey Tyler A: Refreshing memory cells of phase change material memory device. Intel, February 14, 2004: KR1020030046190

PURPOSE: A method is provided to selectively refresh a memory cell of a phase change material memory device. CONSTITUTION: A computer system(30) includes other components than the memory controller hub(34) and the memory(32). The computer system(30) includes a processor(42) (one or more microprocess ...


38
Lowrey Tyler A: Phase change material memory device. Intel Corporation, April 17, 2004: KR1020047003309

A phase change material memory cell (10) may be formed with singulated, cup-shaped phase change material (18). The interior of the cup-shaped phase change material (18) may be filled with a thermal insulating material (22). As a result, heat losses upwardly through the phase change material (18) may ...


39
Lowrey Tyler A, Parkinson Ward D, Gill Manzur: Technique and apparatus for performing write operations to a phase change material memory device. Ovonyx, June 23, 2004: KR1020047006453

A technique includes, in response to a request to write data to memory cells (140) of a phase change memory device (33), placing the memory cells (140) in a state that is shared in common among the memory cells (140). Also, in response to this request, the data is written to the memory cells (140).


40
Cho Sung Lae, Bae Byoung Jae, Lee Jin Il, Park Hye Young, Park Young Lim, Kim Rak Hwan: Phase change material memory device and a method for forming the same capable of minimizing the contact area between the conductors and the phase change material. Samsung Electronics, November 7, 2008: KR1020070043664

PURPOSE: A phase change material memory device and a method for forming the same are provided to reduce the contact area between the conductor and the phase change material layer. CONSTITUTION: A phase change material memory device comprises the first insulating layer(60) which is provided to the to ...