21
Tyler A Lowrey: Phase change material memory device. Trop Pruner & Hu PC, April 7, 2005: US20050074933-A1

A lower electrode may be covered by a protective film to reduce the exposure of the lower electrode to subsequent processing steps or the open environment. As a result, materials that may have advantageous properties as lower electrodes may be utilized despite the fact that they may be sensitive to ...


22
Stephen S Furkay, Hendrick T Hamann, Jeffrey B Johnson, Chung H Lam, Hon Sum P Wong: Phase Change Memory Cell On Silicon-On Insulator Substrate. International Business Machines Corporation, Scully Scott Murphy & Presser PC, September 22, 2005: US20050208699-A1

The present invention includes a method for forming a phase change material memory device and the phase change memory device produced therefrom. Specifically, the phase change memory device includes a semiconductor structure including a substrate having a first doped region flanked by a set of secon ...


23
Tyler A Lowrey: Phase change material memory device. Timothy N Trop, Trop Pruner & Hu PC, March 20, 2008: US20080067491-A1

A lower electrode may be covered by a protective film to reduce the exposure of the lower electrode to subsequent processing steps or the open environment. As a result, materials that may have advantageous properties as lower electrodes may be utilized despite the fact that they may be sensitive to ...


24
Tyler A Lowrey: Phase change material memory device. Timothy N Trop, Trop Pruner & Hu PC, March 13, 2003: US20030047762-A1

A phase change material memory cell may be formed with singulated, cup-shaped phase change material. The interior of the cup-shaped phase change material may be filled with a thermal insulating material. As a result, heat losses upwardly through the phase change material may be reduced and adhesion ...


25
Tyler A Lowrey: Phase change material memory device. Timothy N Trop, Trop Pruner & Hu PC, May 1, 2003: US20030082908-A1

A lower electrode may be covered by a protective film to reduce the exposure of the lower electrode to subsequent processing steps or the open environment. As a result, materials that may have advantageous properties as lower electrodes may be utilized despite the fact that they may be sensitive to ...


26
Tyler A Lowrey: Phase Change Material Memory Device. August 4, 2011: US20110189832-A1

A lower electrode may be covered by a protective film to reduce the exposure of the lower electrode to subsequent processing steps or the open environment. As a result, materials that may have advantageous properties as lower electrodes may be utilized despite the fact that they may be sensitive to ...


27
Bruce G Elmegreen, Lia Krusin Elbaum, Dennis M Newns, Robert L Sandstrom: High Density Low Power Nanowire Phase Change Material Memory Device. International Business Machines Corporation, May 26, 2011: US20110122682-A1

A memory cell device includes a semiconductor nanowire extending, at a first end thereof, from a substrate; the nanowire having a doping profile so as to define a field effect transistor (FET) adjacent the first end, the FET further including a gate electrode at least partially surrounding the nanow ...


28
Bruce G Elmegreen, Lia Krusin Elbaum, Dennis M Newns, Robert L Sandstrom: High density low power nanowire phase change material memory device. International Business Machines Corporation, September 6, 2012: US20120225527-A1

A memory cell device includes a semiconductor nanowire extending, at a first end thereof, from a substrate; the nanowire having a doping profile so as to define a field effect transistor (FET) adjacent the first end, the FET further including a gate electrode at least partially surrounding the nanow ...


29
Parkinson Ward D, Lowrey Tyler A: Refreshing memory cells of a phase change material memory device. Intel Corporation, MALLIE Michael J, February 12, 2004: WO/2004/013862

A technique includes determining whether a storage level of a phase change memory cell is within a predefined margin from a resistance threshold. In response to the determination, the cell is selectively written.


30
Lowrey Tyler A: Phase change material memory device. Intel Corporation, TROP Timothy N, March 20, 2003: WO/2003/023875

A phase change material memory cell (10) may be formed with singulated, cup-shaped phase change material (18). The interior of the cup-shaped phase change material (18) may be filled with a thermal insulating material (22). As a result, heat losses upwardly through the phase change material (18) may ...